Radiation-induced oscillatory Hall effect in high-mobility G a a s / A l x Ga 1 − x as devices

Mani, R. G.Narayanamurti, V.von Klitzing, K.Smet, J. H.Johnson, W. B.Umansky, V.2019-09-272004Mani, R. G., V. Narayanamurti, K. von Klitzing, J. H. Smet, W. B. Johnson, and V. Umansky. 2004. “Radiation-Induced Oscillatory Hall Effect in High-mobilityGaAs/AlxGa1−xAsdevices.” Physical Review B 69 (16). https://doi.org/10.1103/physrevb.69.161306.1098-01211550-235Xhttp://nrs.harvard.edu/urn-3:HUL.InstRepos:41417234We examine the radiation induced modification of the Hall effect in high-mobility GaAs/AlxGa1-xAs devices that exhibit vanishing resistance under microwave excitation. The modification in the Hall effect upon irradiation is characterized by (a) a small reduction in the slope of the Hall resistance curve with respect to the dark value, (b) a periodic reduction in the magnitude of the Hall resistance R-xy that correlates with an increase in the diagonal resistance R-xx, anden-USRadiation-induced oscillatory Hall effect in high-mobility G a a s / A l x Ga 1 − x as devicesJournal Article2019-09-2710.1103/PhysRevB.69.161306