Ruzmetov, DmitryHeiman, DonClaflin, Bruce B.Narayanamurti, VenkateshRamanathan, Shriram2019-09-272009Ruzmetov, Dmitry, Don Heiman, Bruce B. Claflin, Venkatesh Narayanamurti, and Shriram Ramanathan. 2009. “Hall Carrier Density and Magnetoresistance Measurements in Thin-Film Vanadium Dioxide across the Metal-Insulator Transition.” Physical Review B 79 (15). https://doi.org/10.1103/physrevb.79.153107.1098-01211550-235Xhttp://nrs.harvard.edu/urn-3:HUL.InstRepos:41417252Temperature-dependent magnetotransport measurements in magnetic fields of up to 12 T were performed on thin-film vanadium dioxide (VO(2)) across the metal-insulator transition (MIT). The Hall carrier density increases by 4 orders of magnitude at the MIT and accounts almost entirely for the resistance change. The Hall mobility varies little across the MIT and remains low, similar to 0.1 cm(2)/V sec. Electrons are found to be the major carriers on both sides of the MIT. Small positive magnetoresistance in the semiconducting phase is measured.en-USJournal Article2019-09-2710.1103/PhysRevB.79.153107