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    • On the limits to Ti incorporation into Si using pulsed laser melting 

      Mathews, Jay; Akey, Austin J.; Recht, Daniel; Malladi, Girish; Efstathiadis, Harry; Aziz, Michael J.; Warrender, Jeffrey M. (AIP Publishing, 2014)
      Fabrication of p-Si(111) layers with Ti levels well above the solid solubility limit was achieved via ion implantation of 15 keV 48Ti+ at doses of 1012 to 1016 cm−2 followed by pulsed laser melting using a Nd:YAG laser ...