Synthesis of GaNxAs1-x thin films by pulsed laser melting and rapid thermal annealing of N+-implanted GaAs

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Synthesis of GaNxAs1-x thin films by pulsed laser melting and rapid thermal annealing of N+-implanted GaAs

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Title: Synthesis of GaNxAs1-x thin films by pulsed laser melting and rapid thermal annealing of N+-implanted GaAs
Author: Liliental-Weber, Zuzanna; Scarpulla, Michael A.; Dubon, Oscar D., Jr.; Jasinski, Jacek; Yu, Kin Man; Wu, Jay; Pillai, Manoj R.; Aziz, Michael; Walukiewicz, Wladek; J. W., Beeman

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Citation: Yu, Kin Man, Wladek Walukiewicz, Michael A. Scarpulla, Oscar D. Dubon, Jr., Jay Wu, Jacek Jasinski, Zuzanna Liliental-Weber, J. W. Beeman, Manoj R. Pillai, and Michael J. Aziz. Synthesis of GaN x As 1-x thin films by pulsed laser melting and rapid thermal annealing of N +-implanted GaAs. 2003. Journal of Applied Physics 94(2): 1043-1049.
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Abstract: We present a systematic investigation on the formation of the highly mismatched alloy GaNxAs1–x using N+-implantation followed by a combination of pulsed laser melting and rapid thermal annealing. Thin films of GaNxAs1–x with x as high as 0.016 and an activation efficiency of the implanted N up to 50% have been synthesized with structural and optical properties comparable to films grown by epitaxial deposition techniques with similar substitutional N content. The effects of N+ implantation dose, laser energy fluence, and rapid thermal annealing temperature on the N incorporation as well as optical and structural properties of the GaNxAs1–x films are discussed.
Published Version: http://dx.doi.org/10.1063/1.1582393
Other Sources: http://www.seas.harvard.edu/matsci/people/aziz/publications/mja149.pdf
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:2797690

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  • FAS Scholarly Articles [6463]
    Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University
 
 

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