AlGaN/GaN MOSHEMT on Si Substrate with High on/off Ratio and High Off-state Breakdown Voltage Enabled by Atomic Layer Epitaxial MgCaO as Gate Dielectric
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Zhou, Hong; Lou, Xiabing; Chabak, Kelson D.; Gordon, R.G.; Ye, Peide D. 2015. AlGaN/GaN MOSHEMT on Si Substrate with High on/off Ratio and High Off-state Breakdown Voltage Enabled by Atomic Layer Epitaxial MgCaO as Gate Dielectric. 46th IEEE Semiconductor Interface Specialists Conference, Arlington, VA, December 2-5, 2015.Other Sources
http://faculty.chemistry.harvard.edu/files/gordon/files/mgcao-algan-gan-si-sisc-2015_1.pdfTerms of Use
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