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dc.contributor.author	Branton, Daniel
dc.contributor.author	Han, Anpan
dc.contributor.author	Vlassarev, Dimitar Mihaylov
dc.contributor.author	Wang, Jenny Yingzi
dc.contributor.author	Golovchenko, Jene A.
dc.date.accessioned	2011-01-04T14:42:09Z
dc.date.issued	2010
dc.identifier.citation	Han, Anpan, Dimitar Vlassarev, Jenny Wang, Jene A. Golvchenko, and Daniel Branton. 2010. Nano Letters 10(12): 5056-5059.	en_US
dc.identifier.issn	1530-6984	en_US
dc.identifier.uri	http://nrs.harvard.edu/urn-3:HUL.InstRepos:4635033
dc.description.abstract	We report the successful application of a new approach, ice lithography (IL), to fabricate nanoscale devices. The entire IL process takes place inside a modified scanning electron microscope (SEM), where a vapor-deposited film of water ice serves as a resist for e-beam lithography, greatly simplifying and streamlining device fabrication. We show that labile nanostructures such as carbon nanotubes can be safely imaged in an SEM when coated in ice. The ice film is patterned at high e-beam intensity and serves as a mask for lift-off without the device degradation and contamination associated with e-beam imaging and polymer resist residues. We demonstrate the IL preparation of carbon nanotubes field effect transistors (FETs) with high quality trans-conductance properties.	en_US
dc.description.sponsorship	Engineering and Applied Sciences	en_US
dc.description.sponsorship	Molecular and Cellular Biology	en_US
dc.description.sponsorship	Physics	en_US
dc.language.iso	en_US	en_US
dc.publisher	American Chemical Society	en_US
dc.relation.isversionof	doi:10.1021/nl1032815	en_US
dash.license	OAP
dc.subject	e-beam lithography	en_US
dc.subject	carbon nanotube	en_US
dc.subject	field effect transistor	en_US
dc.subject	nano-device	en_US
dc.title	Ice Lithography for Nano-Devices	en_US
dc.type	Journal Article	en_US
dc.description.version	Accepted Manuscript	en_US
dc.relation.journal	Nano Letters	en_US
dash.depositing.author	Branton, Daniel
dc.date.available	2011-01-04T14:42:09Z

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  Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University

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