Person: Bhandari, Harish B
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Bhandari
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Harish B
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Bhandari, Harish B
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Publication Quantitative Evaluation of Cobalt Disilicide/Si Interfacial Roughness(The Electrochemical Society, 2017) Yang, Jing; Feng, Jun; Li, Kecheng; Bhandari, Harish B; Li, Zhefeng; Gordon, RoyThe formation of smooth, conformal cobalt disilicide (CoSi2) without facets or voids is critical for microelectronic device reliability owing to the ultra-shallow contact areas. Here we demonstrate the formation of smooth and conformal CoSi2 films by chemical vapor deposition (CVD) of cobalt nitride (CoxN) films on silicon (Si) or on silicon on insulator (SOI) substrates, followed by in-situ rapid thermal annealing (RTA) at 700°C. To reveal the CoSi2/Si interfacial morphology, we report a back-to-front sample preparation method, in which mechanical polishing, anisotropic tetramethylammonium hydroxide (TMAH) wet etching, hydrofluoric acid (HF) wet etching, and isotropic xenon difluoride (XeF2) dry etching are employed to remove the SOI substrate from the back side to expose the CoSi2/Si interface. This method offers a robust and reliable procedure for quantitative assessment of the CoSi2/Si interfacial roughness, as well as analytical support for advanced fabrication process development.Publication Chemical Vapor Deposition (CVD) of Manganese Self-Aligned Diffusion Barriers for Cu Interconnections in Microelectronics(Materials Research Society, 2009) Gordon, Roy; Kim, Hoon; Au, Yeung; Wang, Hongtao; Bhandari, Harish B; Liu, Yiqun; Lee, Don K; Lin, YouboBarriers to prevent diffusion of copper, oxygen and water vapor were formed by CVD using a manganese precursor vapor that reacts with silica surfaces. The manganese metal penetrates only a few nanometers into the silica to make conformal amorphous manganese silicate layers. This MnSixOy was found to be an excellent barrier to the diffusion of Cu, O2 and H2O vapor. The adhesion strength of Cu to the MnSixOy was found to be sufficiently strong to satisfy the semiconductor industry requirements for interconnections in future microelectronic devices. CVD Mn dissolves into copper surfaces and then diffuses to increase adhesion to SiCNO capping layers.Publication Ultrathin CVD Cu Seed Layer Formation Using Copper Oxynitride Deposition and Room Temperature Remote Hydrogen Plasma Reduction(Electrochemical Society, 2008) Kim, Hoon; Bhandari, Harish B; Xu, Sheng; Gordon, RoyCu seed layers for future interconnects must have conformal step coverage, smooth surface morphology, and strong adhesion. Conformal deposition had been achieved by chemical vapor deposition (CVD), but CVD Cu films have rough surfaces and poor adhesion. In this paper, conformal, smooth, adherent, continuous, and thin (<9 nm) Cu films were made by CVD. CuON was deposited from a Cu-amidinate precursor, H2O, and NH3 at 140–180°C on Ru. Crystallites in the deposited film have either a Cu2O or Cu3N structure depending on the ratio of H2O to NH3. As-deposited CuON films have a smooth surface morphology [~0.5 nm root-mean-square (rms) roughness] and are highly conformal (>95% step coverage in 40:1 aspect ratio holes). The CuON films were then reduced with remote hydrogen plasma near room temperature to minimize agglomeration of the thin Cu films during reduction. After reduction, CuON films having a Cu2O crystal structure showed a higher density Cu film (95%) than those having a Cu3N crystal structure (84%). Both reduced Cu films had a smooth morphology (~1 nm rms roughness). Thus, deposition of a CuON film having a Cu2O crystal structure and then reduction with remote hydrogen plasma can make Cu layers that can serve as seed layers of future Cu interconnects.