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Gao, Anyuan

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Gao

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Anyuan

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Gao, Anyuan

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2023 - 20242

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Author's Publications: search.filters.isAuthorOfPublication.0a2c05e0-03d9-4506-8f1d-f2945dd8bc07

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    An antiferromagnetic diode effect in even-layered MnBi2Te4
    (Springer Science and Business Media LLC, 2024-08-12) Gao, Anyuan; Chen, Shao-Wen; Ghosh, Barun; Qiu, Jian-Xiang; Liu, Yu-Fei; Onishi, Yugo; Hu, Chaowei; Qian, Tiema; Bérubé, Damien; Dinh, Thao; Li, Houchen; Tzschaschel, Christian; Park, Seunghyun; Huang, Tianye; Lien, Shang-Wei; Sun, Zhe; Ho, Sheng-Chin; Singh, Bahadur; Watanabe, Kenji; Taniguchi, Takashi; Bell, David C.; Bansil, Arun; Lin, Hsin; Chang, Tay-Rong; Yacoby, Amir; Ni, Ni; Fu, Liang; Ma, Qiong; Xu, Su-Yang
    In a PN junction, the separation between positive and negative charges leads to diode transport. In the past few years, the intrinsic diode transport in noncentrosymmetric polar conductors has attracted great interest, because it suggests novel nonlinear applications and provides a symmetry-sensitive probe of Fermi surface. Recently, such studies have been extended to noncentrosymmetric superconductors, realizing the superconducting diode effect. Here, we show that, even in a centrosymmetric crystal without directional charge separation, the spins of an antiferromagnet (AFM) can generate a spatial directionality, leading to an AFM diode effect. We observe large second-harmonic transport in a nonlinear electronic device enabled by the compensated AFM state of even-layered MnBi$_2$Te$_4$. We also report a novel electrical sum-frequency generation (SFG), which has been rarely explored in contrast to the well-known optical SFG in wide-gap insulators. We demonstrate that the AFM enables an in-plane field-effect transistor and harvesting of wireless electromagnetic energy. The electrical SFG establishes a powerful method to study nonlinear electronics built by quantum materials. The AFM diode effect paves the way for potential device concepts including AFM logic circuits, self-powered AFM spintronics and other applications that potentially bridge nonlinear electronics with AFM spintronics.
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    Quantum metric nonlinear Hall effect in a topological antiferromagnetic heterostructure
    (American Association for the Advancement of Science (AAAS), 2023-07-14) Gao, Anyuan; Liu, Yu-Fei; Qiu, Jian-Xiang; Ghosh, Barun; V. Trevisan, Thaís; Onishi, Yugo; Hu, Chaowei; Qian, Tiema; Tien, Hung-Ju; Chen, Shao-Wen; Huang, Mengqi; Bérubé, Damien; Li, Houchen; Tzschaschel, Christian; Dinh, Thi Huong Thao; Sun, Zhe; Ho, Sheng-Chin; Lien, Shang-Wei; Singh, Bahadur; Watanabe, Kenji; Taniguchi, Takashi; Bell, David C.; Lin, Hsin; Chang, Tay-Rong; Du, Chunhui Rita; Bansil, Arun; Fu, Liang; Ni, Ni; Orth, Peter P.; Ma, Qiong; Xu, Su-Yang
    Quantum geometry in condensed-matter physics has two components: the real part quantum metric and the imaginary part Berry curvature. Whereas the effects of Berry curvature have been observed through phenomena such as the quantum Hall effect in two-dimensional electron gases and the anomalous Hall effect (AHE) in ferromagnets, the quantum metric has rarely been explored. Here, we report a nonlinear Hall effect induced by the quantum metric dipole by interfacing even-layered MnBi2Te4 with black phosphorus. The quantum metric nonlinear Hall effect switches direction upon reversing the antiferromagnetic (AFM) spins and exhibits distinct scaling that is independent of the scattering time. Our results open the door to discovering quantum metric responses predicted theoretically and pave the way for applications that bridge nonlinear electronics with AFM spintronics.