Person:

Park, Hongkun

Rhombohedral stacked multilayer graphene hosts a pair of flat bands touching at zero energy, which should give rise to correlated electron phenomena that can be further tuned by an electric field. Furthermore, when electron correlation breaks the isospin symmetry, the valley-dependent Berry phase at zero energy may give rise to topologically non-trivial states. Here, we measure electron transport through hBN-encapsulated pentalayer graphene down to 100 mK. We observed a correlated insulating state with resistance R>MΩ at charge density n=0 and displacement field D=0. Tight-binding calculations predict a metallic ground state under these conditions. By increasing D, we observed a Chern insulator state with C = -5 and two other states with C = -3 at magnetic field around 1 T. At high D and n, we observed isospin-polarized quarter- and half-metals. Hence, rhombohedral stacked pentalayer graphene exhibits two different types of Fermi-surface instabilities, one driven by a pair of flat bands touching at zero energy, and one induced by the Stoner mechanism in a single flat band. Our results establish rhombohedral stacked multilayer graphene as suitable system to explore intertwined electron correlation and topology phenomena in natural graphitic materials without the need for moiré superlattice engineering.

Van der Waals heterostructures obtained via stacking and twisting have been used to create moiré superlattices, enabling new optical and electronic properties in solid-state systems. Moiré lattices in twisted bilayers of transition metal dichalcogenides (TMDs) result in exciton trapping, host Mott insulating and superconducting states, and act as unique Hubbard systems whose correlated electronic states can be detected and manipulated optically. Structurally, these twisted heterostructures feature atomic reconstruction and domain formation. However, due to the nanoscale sizes of moiré domains, the effects of atomic reconstruction on the electronic and excitonic properties could not be systematically investigated. Here, we use near 0o twist angle MoSe2/MoSe2 bilayers with large rhombohedral AB/BA domains to directly probe excitonic properties of individual domains with far-field optics. We show that this system features broken mirror/inversion symmetry, with the AB and BA domains supporting interlayer excitons with out-of-plane electric dipole moments in opposite directions. The dipole orientation of ground-state Γ-K interlayer excitons can be flipped with electric fields, while higher-energy K-K interlayer excitons undergo field-asymmetric hybridization with intralayer K-K excitons. Our study reveals the impact of crystal symmetry on TMD excitons and points to new avenues for realizing topologically nontrivial systems, exotic metasurfaces, collective excitonic phases, and quantum emitter arrays via domain-pattern engineering.