Person: Huang, Jinlin
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Publication Diameter-dependent dopant location in silicon and germanium nanowires
(Proceedings of the National Academy of Sciences, 2009) Xie, P.; Hu, Y.; Fang, Y.; Huang, Jinlin; Lieber, CharlesWe report studies defining the diameter-dependent location of electrically active dopants in silicon (Si) and germanium (Ge) nanowires (NWs) prepared by nanocluster catalyzed vapor-liquid-solid (VLS) growth without measurable competing homogeneous decomposition and surface overcoating. The location of active dopants was assessed from electrical transport measurements before and after removal of controlled thicknesses of material from NW surfaces by low-temperature chemical oxidation and etching. These measurements show a well-defined transition from bulk-like to surface doping as the diameter is decreased <22–25 nm for n- and p-type Si NWs, although the surface dopant concentration is also enriched in the larger diameter Si NWs. Similar diameter-dependent results were also observed for n-type Ge NWs, suggesting that surface dopant segregation may be general for small diameter NWs synthesized by the VLS approach. Natural surface doping of small diameter semiconductor NWs is distinct from many top-down fabricated NWs, explains enhanced transport properties of these NWs and could yield robust properties in ultrasmall devices often dominated by random dopant fluctuations.
Publication Scalable Ultrasmall Three-Dimensional Nanowire Transistor Probes for Intracellular Recording
(Springer Science and Business Media LLC, 2019-07-01) Zhao, Yunlong; You, Siheng Sean; Zhang, Anqi; Lee, Jae-Hyun; Huang, Jinlin; Lieber, CharlesNew tools for intracellular electrophysiology that push the limits of spatiotemporal resolution while reducing invasiveness could provide a deeper understanding of electrogenic cells and their networks in tissues and push progress towards human-machine interfaces. While significant advances have been made in developing nanodevices for intracellular probes, current approaches exhibit a tradeoff between device scalability and recording amplitude. We address this challenge by combining deterministic shape-controlled nanowire transfer with spatially-defined semiconductor-to-metal transformation to realize scalable nanowire field-effect transistor probe arrays with controllable tip geometry and sensor size, which enable recording of up to 100 mV intracellular action potentials from primary neurons. Systematic studies on neurons and cardiomyocytes show that controlling device curvature and sensor size is critical for achieving high amplitude intracellular recordings. In addition, this device design allows for multiplexed recording from single cells and cell networks and could enable future investigations of dynamics in the brain and other tissues.