(American Institute of Physics, 2011) El-Ella, H.A.R.; Rol, F; Kappers, M.J.; Russell, Kasey; Hu, Evelyn; Oliver, R.A.
Microdisks incorporating InGaN quantum dots were fabricated using SiO2 microspheres as a hard mask in conjunction with a photoelectrochemical etch step from a structure containing a sacrificial InGaN/InGaN superlattice. Formation of microdisks from two near-identical structures with differing dislocation densities was carried out and investigated using microphotoluminescence. This confirmed the existence of quantum dots through the presence of resolution limited spectral lines and showed a clear correlation between the resulting modes quality factors and the dislocation densities within the disks. The disks with higher dislocation densities showed up to 80% lower quality factors than the low dislocation density disks.
