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Oliver, Rachel

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Oliver

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Oliver, Rachel

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2013 - 20152

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Author's Publications: search.filters.isAuthorOfPublication.3adbbeea-cd23-455d-9edc-08c316d26e19

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    Low threshold, room-temperature microdisk lasers in the blue spectral range
    (American Institute of Physics (AIP), 2013) Aharonovich, Igor; Woolf, Alexander J; Russell, Kasey; Zhu, Tongtong; Niu, Nan; Kappers, Menno J.; Oliver, Rachel; Hu, Evelyn
    InGaN-based active layers within microcavity resonators offer the potential of low threshold lasers in the blue spectral range. Here, we demonstrate optically pumped, room temperature lasing in high quality factor GaN microdisk cavities, containing InGaN quantum dots (QDs) with thresholds as low as \(0.28 mJ/cm^2\). The demonstration of lasing action from GaN microdisk cavities with QDs in the active layer, provides a critical step for the nitrides in realizing low threshold photonic devices with efficient coupling between QDs and an optical cavity.
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    Ultra-low threshold gallium nitride photonic crystal nanobeam laser
    (AIP Publishing, 2015) Niu, Nan; Woolf, Alexander J; Wang, Danqing; Zhu, Tongtong; Quan, Qimin; Oliver, Rachel; Hu, Evelyn
    We report exceptionally low thresholds (9.1 μJ/cm2) for room temperature lasing at ∼450 nm in optically pumped Gallium Nitride (GaN) nanobeam cavity structures. The nanobeam cavity geometry provides high theoretical Q (>100 000) with small modal volume, leading to a high spontaneous emission factor, β = 0.94. The active layer materials are Indium Gallium Nitride (InGaN) fragmented quantum wells (fQWs), a critical factor in achieving the low thresholds, which are an order-of-magnitude lower than obtainable with continuous QW active layers. We suggest that the extra confinement of photo-generated carriers for fQWs (compared to QWs) is responsible for the excellent performance.