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Feng, Jun

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Feng

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Jun

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Feng, Jun

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2015 - 20197

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Author's Publications: search.filters.isAuthorOfPublication.6e8bc4a5-b3c0-4c89-8545-2627c7dea05d

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Now showing 1 - 7 of 7
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    Pure and conformal CVD nickel and nickel monosilicide in high-aspect-ratio structures analyzed by atom probe tomography
    (AIP Publishing, 2017) Li, Kecheng; Feng, Jun; Kwak, Junkeun; Yang, Jing; Gordon, Roy
    Low-resistance and uniform contacts are needed for modern 3-D silicon transistors. The formation of high-quality and conformal nickel silicide at the interface between silicon and metal contacts is a possible solution. Direct-liquid-evaporation chemical vapor deposition is used to deposit nickel films conformally inside narrow silicon trenches. The deposited Ni is then reacted with a silicon substrate to form nickel monosilicide. Atom probe tomography (APT) is used to find and count the atoms in nanoscale regions inside these 3-D structures. APT shows that these NiSi films are stoichiometrically pure, single-phase, and conformal even inside trenches with high aspect ratios. The APT technique measures all impurities, including carbon, nitrogen, and oxygen, to have concentrations less than 0.1 at. %.
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    Direct-liquid-evaporation chemical vapor deposition of smooth, highly conformal cobalt and cobalt nitride thin films
    (Royal Society of Chemistry (RSC), 2015) Yang, Jing; Li, Kecheng; Feng, Jun; Gordon, Roy
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    Epitaxial Growth of MgxCa1–xO on GaN by Atomic Layer Deposition
    (American Chemical Society (ACS), 2016) Lou, Xiabing; Zhou, Hong; Kim, Sang Bok; Alghamdi, Sami; Gong, Xian; Feng, Jun; Wang, Xinwei; Ye, Peide D.; Gordon, Roy
    We demonstrate for the first time that a singlecrystalline epitaxial MgxCa1−xO film can be deposited on gallium nitride (GaN) by atomic layer deposition (ALD). By adjusting the ratio between the amounts of Mg and Ca in the film, a lattice matched MgxCa1−xO/GaN(0001) interface can be achieved with low interfacial defect density. High-resolution X-ray diffraction (XRD) shows that the lattice parameter of this ternary oxide nearly obeys Vegard’s law. An atomically sharp interface from cross-sectional transmission electron microscopy (TEM) confirmed the high quality of the epitaxy.High-temperature capacitance−voltage characterization showed that the film with composition Mg0.25Ca0.75O has the lowest interfacial defect density. With this optimal oxide composition, a Mg0.25Ca0.75O/AlGaN/GaN metal−oxide −semiconductor high-electron-mobility (MOS-HEMT) device was fabricated. An ultrahigh on/off ratio of 1012 and a near ideal SS of 62 mV/dec were achieved with this device.
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    Vapor Deposition of Copper-Manganese Interconnects
    (IEEE, 2016) Gordon, Roy; Feng, Jun; Li, Kecheng; Gong, Xian
    Chemical vapor deposition (CVD) of copper and manganese can produce interconnects scaled down to below 10 nm, while enhancing their conductivity and lifetime. CVD using similar super-conformal processes can enable very narrow through-silicon-vias, as well as tiny and robust flexible wires between chips. Silica insulating layers can be made by a super-conformal and rapid atomic layer deposition (ALD) process.
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    Direct-Liquid-Evaporation Chemical Vapor Deposition of Nanocrystalline Cobalt Metal for Nanoscale Copper Interconnect Encapsulation
    (American Chemical Society (ACS), 2017) Feng, Jun; Gong, Xian; Lou, Xiabing; Gordon, Roy
    In advanced microelectronics, precise design of liner and capping layers become critical, especially when it comes to the fabrication of Cu interconnects with dimensions lower than its mean free path. Herein, we demonstrate that direct-liquid-evaporation chemical vapor deposition (DLECVD) of Co is a promising method to make liner and capping layers for nanoscale Cu interconnects. DLE-CVD makes pure, smooth, nanocrystalline, and highly conformal Co films with highly controllable growth characteristics. This process allows full Co encapsulation of nanoscale Cu interconnects, thus stabilizing Cu against diffusion and electromigration. Electrical measurements and high-resolution elemental imaging studies show that the DLE-CVD Co encapsulation layer can improve the reliability and thermal stability of Cu interconnects. Also, with the high conductivity of Co, the DLE-CVD Co encapsulation layer have the potential to further decrease the power consumption of nanoscale Cu interconnects, paving the way for Cu interconnects with higher efficiency in future high-end microelectronics.
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    Quantitative Evaluation of Cobalt Disilicide/Si Interfacial Roughness
    (The Electrochemical Society, 2017) Yang, Jing; Feng, Jun; Li, Kecheng; Bhandari, Harish B; Li, Zhefeng; Gordon, Roy
    The formation of smooth, conformal cobalt disilicide (CoSi2) without facets or voids is critical for microelectronic device reliability owing to the ultra-shallow contact areas. Here we demonstrate the formation of smooth and conformal CoSi2 films by chemical vapor deposition (CVD) of cobalt nitride (CoxN) films on silicon (Si) or on silicon on insulator (SOI) substrates, followed by in-situ rapid thermal annealing (RTA) at 700°C. To reveal the CoSi2/Si interfacial morphology, we report a back-to-front sample preparation method, in which mechanical polishing, anisotropic tetramethylammonium hydroxide (TMAH) wet etching, hydrofluoric acid (HF) wet etching, and isotropic xenon difluoride (XeF2) dry etching are employed to remove the SOI substrate from the back side to expose the CoSi2/Si interface. This method offers a robust and reliable procedure for quantitative assessment of the CoSi2/Si interfacial roughness, as well as analytical support for advanced fabrication process development.
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    Synthesis of Volatile, Reactive Coinage Metal 5,5-Bicyclic Amidinates With Enhanced Thermal Stability for Chemical Vapor Deposition
    (Royal Society of Chemistry (RSC), 2019) Tong, Liuchuan; Gong, Xian; Feng, Jun; Gordon, Roy; Davis, Luke; Beth, Eugene
    Many microelectronic devices require thin films of silver or gold as wiring layers. We report silver(I) and gold(I) bicyclic amidinate complexes, wherein the constrained ligand geometry lessens the propensity for thermal decomposition. These new volatile compounds provide metallic films of silver and gold during CVD with hydrogen below 230 °C.