Person: Sipahigil, Alp
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Sipahigil
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Alp
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Sipahigil, Alp
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Publication Novel fabrication of diamond nanophotonics coupled to single-photon detectors(SPIE-Intl Soc Optical Eng, 2017) Atikian, Haig; Meesala, Srujan; Burek, Michael; Sohn, Young-Ik; Israelian, Johan; Patri, Adarsh S.; Clarke, Nigel; Sipahigil, Alp; Evans, Ruffin; Sukachev, Denis; Westervelt, Robert; Lukin, Mikhail; Loncar, MarkoFreestanding diamond nanostructures are etched from a bulk diamond substrate and integrated with evanescently coupled superconduncting nanowire single-photon detectors.Publication Quantum Interference of Single Photons from Remote Nitrogen-Vacancy Centers in Diamond(American Physical Society (APS), 2012) Sipahigil, Alp; Goldman, Michael Lurie; Togan, E; Chu, Yiwen; Markham, M.; Twitchen, D. J.; Zibrov, Alexander; Kubanek, Alexander; Lukin, MikhailWe demonstrate quantum interference between indistinguishable photons emitted by two nitrogen-vacancy (NV) centers in distinct diamond samples separated by two meters. Macroscopic solid immersion lenses are used to enhance photon collection efficiency. Quantum interference is verified by measuring a value of the second-order cross-correlation function g(2)(0)=0.35±0.04<0.5. In addition, optical transition frequencies of two separated NV centers are tuned into resonance with each other by applying external electric fields. Extension of the present approach to generate entanglement of remote solid-state qubits is discussed.Publication All-Optical Initialization, Readout, and Coherent Preparation of Single Silicon-Vacancy Spins in Diamond(American Physical Society (APS), 2014) Rogers, Lachlan J.; Jahnke, Kay D.; Metsch, Mathias H.; Sipahigil, Alp; Binder, Jan M.; Teraji, Tokuyuki; Sumiya, Hitoshi; Isoya, Junichi; Lukin, Mikhail; Hemmer, Philip; Jelezko, FedorThe silicon-vacancy (SiV−) color center in diamond has attracted attention because of its unique optical properties. It exhibits spectral stability and indistinguishability that facilitate efficient generation of photons capable of demonstrating quantum interference. Here we show optical initialization and readout of electronic spin in a single SiV− center with a spin relaxation time of T1=2.4±0.2 ms. Coherent population trapping (CPT) is used to demonstrate coherent preparation of dark superposition states with a spin coherence time of T⋆2=35±3 ns. This is fundamentally limited by orbital relaxation, and an understanding of this process opens the way to extend coherence by engineering interactions with phonons. Hyperfine structure is observed in CPT measurements with the Si29 isotope which allows access to nuclear spin. These results establish the SiV− center as a solid-state spin-photon interface.Publication Phonon-Induced Population Dynamics and Intersystem Crossing in Nitrogen-Vacancy Centers(American Physical Society (APS), 2015) Goldman, Michael Lurie; Sipahigil, Alp; Doherty, M. W.; Yao, Norman; Bennett, Steven; Markham, M.; Twitchen, D. J.; Manson, N. B.; Kubanek, Alexander; Lukin, MikhailWe report direct measurement of population dynamics in the excited state manifold of a nitrogen-vacancy (NV) center in diamond. We quantify the phonon-induced mixing rate and demonstrate that it can be completely suppressed at low temperatures. Further, we measure the intersystem crossing (ISC) rate for different excited states and develop a theoretical model that unifies the phonon-induced mixing and ISC mechanisms. We find that our model is in excellent agreement with experiment and that it can be used to predict unknown elements of the NV center’s electronic structure. We discuss the model’s implications for enhancing the NV center’s performance as a room-temperature sensor.Publication Indistinguishable Photons from Separated Silicon-Vacancy Centers in Diamond(American Physical Society (APS), 2014) Sipahigil, Alp; Jahnke, K. D.; Rogers, L. J.; Teraji, T.; Isoya, J.; Zibrov, Alexander; Jelezko, F.; Lukin, MikhailWe demonstrate that silicon-vacancy (SiV) centers in diamond can be used to efficiently generate coherent optical photons with excellent spectral properties. We show that these features are due to the inversion symmetry associated with SiV centers. The generation of indistinguishable single photons from separated emitters at 5 K is demonstrated in a Hong-Ou-Mandel interference experiment. Prospects for realizing efficient quantum network nodes using SiV centers are discussed.Publication Narrow-Linewidth Homogeneous Optical Emitters in Diamond Nanostructures via Silicon Ion Implantation(American Physical Society (APS), 2016) Evans, Ruffin; Sipahigil, Alp; Sukachev, Denis; Zibrov, Alexander; Lukin, MikhailThe negatively-charged silicon-vacancy (SiV−) center in diamond is a bright source of indistinguishable single photons and a useful resource in quantum information protocols. Until now, SiV− centers with narrow optical linewidths and small inhomogeneous distributions of SiV− transition frequencies have only been reported in samples doped with silicon during diamond growth. We present a technique for producing implanted SiV− centers with nearly lifetime-limited optical linewidths and a small inhomogeneous distribution. These properties persist after nanofabrication, paving the way for incorporation of high-quality SiV− centers into nanophotonic devices.Publication Electron–phonon processes of the silicon-vacancy centre in diamond(IOP Publishing, 2015) Jahnke, Kay D; Sipahigil, Alp; Binder, Jan M; Doherty, Marcus W; Metsch, Mathias; Rogers, Lachlan J; Manson, Neil B; Lukin, Mikhail; Jelezko, FedorWe investigate phonon induced electronic dynamics in the ground and excited states of the negatively charged silicon-vacancy (SiV−) centre in diamond. Optical transition line widths, transition wavelength and excited state lifetimes are measured for the temperature range 4 K–350 K. The ground state orbital relaxation rates are measured using time-resolved fluorescence techniques. A microscopic model of the thermal broadening in the excited and ground states of the SiV− centre is developed. A vibronic process involving single-phonon transitions is found to determine orbital relaxation rates for both the ground and the excited states at cryogenic temperatures. We discuss the implications of our findings for coherence of qubits in the ground states and propose methods to extend coherence times of SiV− qubits.Publication State-selective intersystem crossing in nitrogen-vacancy centers(American Physical Society (APS), 2015) Goldman, Michael Lurie; Doherty, M. W.; Sipahigil, Alp; Yao, Norman; Bennett, Steven; Manson, N. B.; Kubanek, Alexander; Lukin, MikhailThe intersystem crossing (ISC) is an important process in many solid-state atomlike impurities. For example, it allows the electronic spin state of the nitrogen-vacancy (NV) center in diamond to be initialized and read out using optical fields at ambient temperatures. This capability has enabled a wide array of applications in metrology and quantum information science. Here, we develop a microscopic model of the state-selective ISC from the optical excited state manifold of the NV center. By correlating the electron-phonon interactions that mediate the ISC with those that induce population dynamics within the NV center's excited state manifold and those that produce the phonon sidebands of its optical transitions, we quantitatively demonstrate that our model is consistent with recent ISC measurements. Furthermore, our model constrains the unknown energy spacings between the center's spin-singlet and spin-triplet levels. Finally, we discuss prospects to engineer the ISC in order to improve the spin initialization and readout fidelities of NV centers.