Person:

Lee, Sang Woon

The formation of a two-dimensional electron gas (2-DEG) using (SrTiO_3) (STO)-based heterostructures provides promising opportunities in oxide electronics. We realized the formation of 2-DEG using several amorphous layers grown by the atomic layer deposition (ALD) technique at 300°C which is a process compatible with mass production and thereby can provide the realization of potential applications. We found that the amorphous (LaAlO_3) (LAO) layer grown by the ALD process can generate 2-DEG ((\sim 1 × 10^{13}/cm^{2})) with an electron mobility of (4–5 cm^2/V·s). A much higher electron mobility was observed at lower temperatures. More remarkably, amorphous (YAlO_3) (YAO) and (Al_2O_3) layers, which are not polar-perovskite-structured oxides, can create 2-DEG as well. 2-DEG was created by means of the important role of trimethylaluminum, (Me_3Al), as a reducing agent for STO during LAO and YAO ALD as well as the (Al_2O_3) ALD process at 300°C. The deposited oxide layer also plays an essential role as a catalyst that enables (Me_3Al) to reduce the STO. The electrons were localized very near to the STO surface, and the source of carriers was explained based on the oxygen vacancies generated in the STO substrate.