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Bulu, Irfan

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Bulu

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Irfan

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Bulu, Irfan

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  • Publication

    Enhanced Single-Photon Emission from a Diamond-Silver Aperture

    (Nature Publishing Group, 2011) Choy, Jennifer Tze-Heng; Hausmann, Birgit Judith Maria; Babinec, Thomas Michael; Bulu, Irfan; Khan, Mughees; Maletinsky, Patrick; Yacoby, Amir; Lončar, Marko

    Solid-state quantum emitters, such as the nitrogen-vacancy centre in diamond, are robust systems for practical realizations of various quantum information processing protocols and nanoscale magnetometry schemes at room temperature. Such applications benefit from the high emission efficiency and flux of single photons, which can be achieved by engineering the electromagnetic environment of the emitter. One attractive approach is based on plasmonic resonators, in which sub-wavelength confinement of optical fields can strongly modify the spontaneous emission of a suitably embedded dipole despite having only modest quality factors. Meanwhile, the scalability of solid-state quantum systems critically depends on the ability to control such emitter–cavity interaction in a number of devices arranged in parallel. Here, we demonstrate a method to enhance the radiative emission rate of single nitrogen-vacancy centres in ordered arrays of plasmonic apertures that promises greater scalability over the previously demonstrated bottom-up approaches for the realization of on-chip quantum networks.

  • Publication

    Single-Color Centers Implanted in Diamond Nanostructures

    (Institute of Physics Publishing, 2011) Hausmann, Birgit Judith Maria; Babinec, Thomas Michael; Choy, Jennifer Tze-Heng; Hodges, Jonathan S.; Hong, Sungkun; Bulu, Irfan; Yacoby, Amir; Lukin, Mikhail; Loncar, Marko

    The development of material-processing techniques that can be used to generate optical diamond nanostructures containing a single-color center is an important problem in quantum science and technology. In this work, we present the combination of ion implantation and top-down diamond nanofabrication in two scenarios: diamond nanopillars and diamond nanowires. The first device consists of a 'shallow' implant (similar to 20 nm) to generate nitrogen-vacancy (NV) color centers near the top surface of the diamond crystal prior to device fabrication. Individual NV centers are then mechanically isolated by etching a regular array of nanopillars in the diamond surface. Photon anti-bunching measurements indicate that a high yield (> 10%) of the devices contain a single NV center. The second device demonstrates 'deep' (similar to (1 \mu m)) implantation of individual NV centers into diamond nanowires as a post-processing step. The high single-photon flux of the nanowire geometry, combined with the low background fluorescence of the ultrapure diamond, allowed us to observe sustained photon anti-bunching even at high pump powers.