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Tzschaschel, Christian

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Tzschaschel

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Christian

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Tzschaschel, Christian

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    Antiferromagnetic metal phase in an electron-doped rare-earth nickelate
    (Springer Science and Business Media LLC, 2023-01-30) Song, Qi; Doyle, Spencer; Pan, Grace A.; El Baggari, Ismail; Ferenc Segedin, Dan; Cordova Carrizales, Denisse; Nordlander, Johanna; Tzschaschel, Christian; Ehrets, James R.; Hasan, Zubia; El-Sherif, Hesham; Krishna, Jyoti; Hanson, Chase; LaBollita, Harrison; Bostwick, Aaron; Jozwiak, Chris; Rotenberg, Eli; Xu, Su-Yang; Lanzara, Alessandra; N'Diaye, Alpha T.; Heikes, Colin A.; Liu, Yaohua; Paik, Hanjong; Brooks, Charles M.; Pamuk, Betül; Heron, John T.; Shafer, Padraic; Ratcliff, William D.; Botana, Antia S.; Moreschini, Luca; Mundy, Julia A.
    Long viewed as passive elements, antiferromagnetic materials have emerged as promising candidates for spintronic devices due to their insensitivity to external fields and potential for high-speed switching. Recent work exploiting spin and orbital effects has identified ways to electrically control and probe the spins in metallic antiferromagnets, especially in noncollinear or noncentrosymmetric spin structures. The rare earth nickelate NdNiO3 is known to be a noncollinear antiferromagnet where the onset of antiferromagnetic ordering is concomitant with a transition to an insulating state. Here, we find that for low electron doping, the magnetic order on the nickel site is preserved while electronically a new metallic phase is induced. We show that this metallic phase has a Fermi surface that is mostly gapped by an electronic reconstruction driven by the bond disproportionation. Furthermore, we demonstrate the ability to write to and read from the spin structure via a large zero-field planar Hall effect. Our results expand the already rich phase diagram of the rare-earth nickelates and may enable spintronics applications in this family of correlated oxides.
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    Quantum metric nonlinear Hall effect in a topological antiferromagnetic heterostructure
    (American Association for the Advancement of Science (AAAS), 2023-07-14) Gao, Anyuan; Liu, Yu-Fei; Qiu, Jian-Xiang; Ghosh, Barun; V. Trevisan, Thaís; Onishi, Yugo; Hu, Chaowei; Qian, Tiema; Tien, Hung-Ju; Chen, Shao-Wen; Huang, Mengqi; Bérubé, Damien; Li, Houchen; Tzschaschel, Christian; Dinh, Thi Huong Thao; Sun, Zhe; Ho, Sheng-Chin; Lien, Shang-Wei; Singh, Bahadur; Watanabe, Kenji; Taniguchi, Takashi; Bell, David C.; Lin, Hsin; Chang, Tay-Rong; Du, Chunhui Rita; Bansil, Arun; Fu, Liang; Ni, Ni; Orth, Peter P.; Ma, Qiong; Xu, Su-Yang
    Quantum geometry in condensed-matter physics has two components: the real part quantum metric and the imaginary part Berry curvature. Whereas the effects of Berry curvature have been observed through phenomena such as the quantum Hall effect in two-dimensional electron gases and the anomalous Hall effect (AHE) in ferromagnets, the quantum metric has rarely been explored. Here, we report a nonlinear Hall effect induced by the quantum metric dipole by interfacing even-layered MnBi2Te4 with black phosphorus. The quantum metric nonlinear Hall effect switches direction upon reversing the antiferromagnetic (AFM) spins and exhibits distinct scaling that is independent of the scattering time. Our results open the door to discovering quantum metric responses predicted theoretically and pave the way for applications that bridge nonlinear electronics with AFM spintronics.