(American Chemical Society, 2014) Diebold, Roger Mitchell; Gordon, Michael J.; Clarke, David
Dielectric breakdown measurements were conducted on self-assembled monolayer (SAM)/native silicon oxide hybrid dielectrics using conductive atomic force microscopy (C-AFM). By depositing silane coupling agents (SCAs) through a diffusional barrier layer, SAM roughness was decoupled from chemistry to compare the chemical effects of exposed R-group functionality on dielectric breakdown. Using Weibull and current–voltage (I–V) analysis, the breakdown strength was observed to be independent of SCA R-group length, and the addition of a SAM was seen to improve the breakdown strength relative to native silicon oxide by up to 158%. Fluorinated SCAs were observed to suppress tunneling leakage and exhibited increased breakdown strength relative to their hydrocarbon analogs. Electron trapping, scattering, or attachment processes inherent to the fluorinated moieties are thought to be the origin of the improved breakdown properties.
