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Woolf, Alexander J

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Woolf

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Alexander J

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Woolf, Alexander J

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2013 - 20153

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Author's Publications: search.filters.isAuthorOfPublication.dea00769-a968-4a1e-80f9-9b67d9985dc4

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    Low threshold, room-temperature microdisk lasers in the blue spectral range
    (American Institute of Physics (AIP), 2013) Aharonovich, Igor; Woolf, Alexander J; Russell, Kasey; Zhu, Tongtong; Niu, Nan; Kappers, Menno J.; Oliver, Rachel; Hu, Evelyn
    InGaN-based active layers within microcavity resonators offer the potential of low threshold lasers in the blue spectral range. Here, we demonstrate optically pumped, room temperature lasing in high quality factor GaN microdisk cavities, containing InGaN quantum dots (QDs) with thresholds as low as \(0.28 mJ/cm^2\). The demonstration of lasing action from GaN microdisk cavities with QDs in the active layer, provides a critical step for the nitrides in realizing low threshold photonic devices with efficient coupling between QDs and an optical cavity.
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    Ultra-low threshold gallium nitride photonic crystal nanobeam laser
    (AIP Publishing, 2015) Niu, Nan; Woolf, Alexander J; Wang, Danqing; Zhu, Tongtong; Quan, Qimin; Oliver, Rachel; Hu, Evelyn
    We report exceptionally low thresholds (9.1 μJ/cm2) for room temperature lasing at ∼450 nm in optically pumped Gallium Nitride (GaN) nanobeam cavity structures. The nanobeam cavity geometry provides high theoretical Q (>100 000) with small modal volume, leading to a high spontaneous emission factor, β = 0.94. The active layer materials are Indium Gallium Nitride (InGaN) fragmented quantum wells (fQWs), a critical factor in achieving the low thresholds, which are an order-of-magnitude lower than obtainable with continuous QW active layers. We suggest that the extra confinement of photo-generated carriers for fQWs (compared to QWs) is responsible for the excellent performance.
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    Low-Threshold Indium Gallium Nitride Quantum Dot Microcavity Lasers
    (2014-11-21) Woolf, Alexander J; Hu, Evelyn; Capasso, Federico; Marko, Loncar
    Gallium nitride (GaN) microcavities with embedded optical emitters have long been sought after as visible light sources as well as platforms for cavity quantum electrodynamics (cavity QED) experiments. Specifically, materials containing indium gallium nitride (InGaN) quantum dots (QDs) offer an outstanding platform to study light matter interactions and realize practical devices, such as on-chip light emitting diodes and nanolasers. Inherent advantages of nitride-based microcavities include low surface recombination velocities, enhanced room-temperature performance (due to their high exciton binding energy, as high as 67 meV for InGaN QDs), and emission wavelengths in the blue region of the visible spectrum. In spite of these advantages, several challenges must be overcome in order to capitalize on the potential of this material system. Such diffculties include the processing of GaN into high-quality devices due to the chemical inertness of the material, low material quality as a result of strain-induced defects, reduced carrier recombination effciencies due to internal fields, and a lack of characterization of the InGaN QDs themselves due to the diffculty of their growth and therefore lack of development relative to other semiconductor QDs. In this thesis we seek to understand and address such issues by investigating the interaction of light coupled to InGaN QDs via a GaN microcavity resonator. Such coupling led us to the demonstration of the first InGaN QD microcavity laser, whose performance offers insights into the properties and current limitations of the nitride materials and their emitters. This work is organized into three main sections. Part I outlines the key advantages and challenges regarding indium gallium nitride (InGaN) emitters embedded within gallium nitride (GaN) optical microcavities. Previous work is also discussed which establishes context for the work presented here. Part II includes the fundamentals related to laser operation, including the derivation and analysis of the laser rate equations. A thorough examination of the rate equations serves as a natural motivation for QDs and high-quality factor low-modal volume resonators as an optimal laser gain medium and cavity, respectively. The combination of the two theoretically yields the most efficient semiconductor laser device possible. Part III describes in detail the design, growth, fabrication and characterization of the first InGaN QD microcavity laser. Additional experiments are also conducted in order to conclusively prove that the InGaN QDs serve as the gain medium and facilitate laser oscillation within the microdisk cavities. Part III continues with work related towards the development of the next generation of nitride light emitting devices. This includes the realization of photonic crystal cavity (PCC) fragmented quantum well (FQW) lasers that exhibit record low lasing thresholds of 9.1 uJ/cm2, comparable to the best devices in other III-V material systems. Part III also discusses cavity QED experiments on InGaN QDs embedded within GaN PCCs in order to quantify the degree of light-matter interaction. The lack of experimental evidence for weak or strong coupling, in the form of the Purcell Effect or cavity-mode anti-crossing respectively, naturally motivates the question of what mechanism is limiting the device performance. Part III concludes with cathodoluminesence and tapered fiber measurements in order to identify the limiting factor towards achieving strong coupling between InGaN QDs and GaN microcavities.