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Sun, Zhe

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Sun, Zhe

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    Quantum metric nonlinear Hall effect in a topological antiferromagnetic heterostructure
    (American Association for the Advancement of Science (AAAS), 2023-07-14) Gao, Anyuan; Liu, Yu-Fei; Qiu, Jian-Xiang; Ghosh, Barun; V. Trevisan, Thaís; Onishi, Yugo; Hu, Chaowei; Qian, Tiema; Tien, Hung-Ju; Chen, Shao-Wen; Huang, Mengqi; Bérubé, Damien; Li, Houchen; Tzschaschel, Christian; Dinh, Thi Huong Thao; Sun, Zhe; Ho, Sheng-Chin; Lien, Shang-Wei; Singh, Bahadur; Watanabe, Kenji; Taniguchi, Takashi; Bell, David C.; Lin, Hsin; Chang, Tay-Rong; Du, Chunhui Rita; Bansil, Arun; Fu, Liang; Ni, Ni; Orth, Peter P.; Ma, Qiong; Xu, Su-Yang
    Quantum geometry in condensed-matter physics has two components: the real part quantum metric and the imaginary part Berry curvature. Whereas the effects of Berry curvature have been observed through phenomena such as the quantum Hall effect in two-dimensional electron gases and the anomalous Hall effect (AHE) in ferromagnets, the quantum metric has rarely been explored. Here, we report a nonlinear Hall effect induced by the quantum metric dipole by interfacing even-layered MnBi2Te4 with black phosphorus. The quantum metric nonlinear Hall effect switches direction upon reversing the antiferromagnetic (AFM) spins and exhibits distinct scaling that is independent of the scattering time. Our results open the door to discovering quantum metric responses predicted theoretically and pave the way for applications that bridge nonlinear electronics with AFM spintronics.