Publication: Structure of III-Sb(001) Growth Surfaces: The Role of Heterodimers
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2000
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American Physical Society
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Barvosa-Carter, W., A. S. Bracker, J. C. Culbertson, B. Z. Nosho, B. V. Shanabrook, L. J. Whitman, Hanchul Kim, N. A. Modine, and E. Kaxiras. 2000. “Structure of III-Sb(001) Growth Surfaces: The Role of Heterodimers.” Physical Review Letters 84 (20): 4649–52. https://doi.org/10.1103/physrevlett.84.4649.
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Abstract
We have determined the structure of AlSb and GaSb (001) surfaces prepared by molecular beam epitaxy under typical Sb-rich device growth conditions. Within the range of flux and temperature where the diffraction pattern is nominally (1 x 3), we find that there are actually three distinct, stable (4 x 3) surface reconstructions. The three structures differ from any previously proposed for these growth conditions, with two of the reconstructions incorporating mixed III-V dimers within the Sb surface layer. These heterodimers appear to play an important role in island nucleation and growth.
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