Publication: Three-dimensional Morphology Evolution of SiO2 Patterned Films Under MeV Ion Irradiation
Date
2006
Published Version
Journal Title
Journal ISSN
Volume Title
Publisher
American Institute of Physics
The Harvard community has made this article openly available. Please share how this access benefits you.
Citation
Otani, Kan, Xi Chen, John W. Hutchinson, John F. Chervinsky, and Michael J. Aziz. 2006. Three-dimensional morphology evolution of SiO2 patterned films under MeV ion irradiation. Journal of Applied Physics 100(2): 023535.
Research Data
Abstract
We have measured the evolving three-dimensional (3D) morphology of patterned SiO<sub>2</sub> stripes on Si substrates induced by 3 MeV O<sup>++</sup> ion irradiation. We develop a 3D constitutive relation to describe anisotropic deformation, densification, and flow. We use this constitutive relation in a finite element model that simulates the experimental morphology evolution, and we find excellent agreement between simulated and measured profiles. The model should be useful in predicting morphology evolution in complex three-dimensional structures under MeV ion irradiation.
Description
Other Available Sources
Keywords
Terms of Use
Metadata Only