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Activation Volume for Phosphorus Diffusion in Silicon and Si0.93Ge0.07

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2005

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10.1063/1.1896445

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American Institute of Physics
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Zhao, Yuechao, Michael J. Aziz, Nikolaj R. Zangenberg, and Arne Nylandsted Larsen. 2005. Activation Volume for phosphorus diffusion in silicon and Si0.93Ge0.07. Applied Physics Letters 86(14): 141902.

Abstract

The hydrostatic pressure dependence of the diffusivity of P in compressively strained Si0.93Ge0.07 and unalloyed Si has been measured. In both cases the diffusivity is almost independent of pressure, characterized by an activation volume V* of (+0.09±0.11) times the atomic volume Omega for the unalloyed Si, and (+0.01±0.06) Omega for Si0.93Ge0.07. The results are used in conjunction with the reported effect of biaxial strain on diffusion normal to the surface to test the prediction for an interstitialcy-based mechanism of Aziz's phenomenological thermodynamic treatment of diffusion under uniform nonhydrostatic stress states. The prediction agrees well with measured behavior, lending additional credence to the interstitial-based mechanism and supporting the nonhydrostatic thermodynamic treatment.

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http://nrs.harvard.edu/urn-3:HUL.InstRepos:2795321

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