Ion Implantation and Annealing of Oxides

Abstract

Ion implantation damage and annealing results are presented for a number of crystalline oxides. In Al2O3, the amorphous phase produced by ion bombardment of the pure material first crystallizes in the (crystal-line) Y phase. This is followed by the transformaiton of Y-Al2O3 to a-Al2O3 at a well defined interface. The activation energy for of a alumina from y is 3.6 eV/atom. In CaTiO3, the implantation-induced amorphous phase transforms to remain crystalline even after high implantation doses at liquid nitrogen temperatures. The near surface of KTaO3 is transformed to a polycrystalline state after inplantation at room temperature or liquid nitrogen temperature.