Publication: Interface Velocity Transients During Melting of a-Si/c-Si Thin Films
Loading...
Open/View Files
Date
1988
Published Version
Journal Title
Journal ISSN
Volume Title
Publisher
Materials Research Society
The Harvard community has made this article openly available. Please share how this access benefits you.
Citation
Jeff Y. Tsao, Michael J. Aziz, Paul S. Peercy, Michael O. Thompson. 1988. Interface velocity transients during melting of a-Si/c-Si thin films. Materials Research Society Symposia Proceedings 100: 519-524.
Abstract
The authors report transient conductance measurement of liquid/solid interface velocities during pulsed laser melting of amorphous Si (a-Si) films on crystalline Si (c-Si), and a more accurate, systematic procedure for analyzing these measurements than described in previous work. From these analyses are extracted relations between the melting velocities of a-Si and c-Si at a given interface temperature, and between the temperatures during steady-state melting of a-Si and c-Si at a given interface velocity.
Description
Other Available Sources
Research Data
Keywords
Terms of Use
This article is made available under the terms and conditions applicable to Other Posted Material (LAA), as set forth at Terms of Service