Publication: On the Temperature Dependence of Point-Defect-Mediated Luminescence in Silicon
Loading...
Open/View Files
Date
2009
Published Version
Journal Title
Journal ISSN
Volume Title
Publisher
American Institute of Physics
The Harvard community has made this article openly available. Please share how this access benefits you.
Citation
Recht, Daniel, Federico Capasso, and Michael J. Aziz. 2009. On the temperature dependence of point-defect-mediated luminescence in silicon. Applied Physics Letters 94(25): 251113.
Abstract
We present a model of the temperature dependence of point-defect-mediated luminescence in silicon derived from basic kinetics and semiconductor physics and based on the kinetics of bound exciton formation. The model provides a good fit to data for W line electroluminescence and G line photoluminescence in silicon. Strategies are discussed for extending luminescence to room temperature.
Description
Other Available Sources
Research Data
Keywords
Terms of Use
This article is made available under the terms and conditions applicable to Other Posted Material (LAA), as set forth at Terms of Service