Publication:

Measurement of the Absolute Raman Cross Section of the Optical Phonons in Type Ia Natural Diamond

Loading...
Thumbnail Image

Date

2012

Journal Title

Journal ISSN

Volume Title

Publisher

Elsevier
The Harvard community has made this article openly available. Please share how this access benefits you.

Research Projects

Organizational Units

Journal Issue

Citation

Aggarwal, R. L., L. W. Farrar, S. K. Saikin, X. Andrade, Alan Aspuru-Guzik, and D. L. Polla. 2012. “Measurement of the Absolute Raman Cross Section of the Optical Phonons in Type Ia Natural Diamond.” Solid State Communications 152 (3) (February): 204–209. doi:10.1016/j.ssc.2011.11.005. http://dx.doi.org/10.1016/j.ssc.2011.11.005.

Abstract

The absolute Raman cross section (\sigma_{RS})of the first-order (1332-cm^{−1}) optical phonons in type Ia natural diamond was measured using 785- and 1064-nm pump lasers for the excitation of Raman scattering. A small temperature-controlled blackbody was used for the signal calibration of the 785- and 1064-nm Raman systems. Measurements were made with a 0.9-mm thick (111) natural diamond sample. Values of (2.7\pm0.6×10^{−29}) and (0.95\pm0.2×10^{−29} cm^2) per carbon atom were determined for (\sigma_{RS}) for 785- and 1064-nm excitation, respectively. The corresponding values of the Raman scattering efficiency S are (3.8\pm0.8×10^{−7}) and (1.3\pm0.3×10^{−7} cm^{−1} sr^{−1}). The values of the Raman polarizability |d| for 785-, and 1064-nm excitation are (6.8\pm0.7×10^{−16}) and (8.1\pm0.8×10^{−16} cm^2), respectively. Our measured values of |d| are larger than the previously measured values of (4.4\pm0.3×10^{−16}) and (4.6\pm0.7×10^{−16} cm^2) using 514.5- and 694-nm excitation, respectively. |d| vs. excitation photon energy was computed for the range from 1.0 eV (1240 nm) to 4.0 eV (310 nm) using time-dependent density functional theory. The computed values of (5.8×10^{−16}) and (5.3×10^{−16} cm^2) for 514.4- and 694-nm excitation, respectively, are larger than the corresponding measured values of |d|. The computed values of (5.2×10^{−16}), and (5.0×10^{−16} cm^2) for 785- and 1064-nm excitation are smaller than the corresponding values of |d| measured in this work. The computed value of |d| in the static limit is (4.7×10^{−16} cm^2). Modification of |d| due to IaA and IaB defects, computed for a 64-atom supercell, is less than 5%.

Description

Other Available Sources

Research Data

Keywords

semiconductors, photons, inelastic light scattering

Terms of Use

Metadata Only

Endorsement

Review

Supplemented By

Related Stories