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Increased negatively charged nitrogen-vacancy centers in fluorinated diamond

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2013

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American Institute of Physics (AIP)
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Cui, Shanying, and Evelyn L. Hu. 2013. Increased Negatively Charged Nitrogen-Vacancy Centers in Fluorinated Diamond. Applied Physics Letters 103(5): 051603.

Abstract

We investigated the effect of fluorine-terminated diamond surface on the charged state of shallow nitrogen vacancy defect centers (NVs). Fluorination is achieved with (CF_4) plasma, and the surface chemistry is confirmed with x-ray photoemission spectroscopy. Photoluminescence of these ensemble NVs reveals that fluorine-treated surfaces lead to a higher and more stable negatively charged nitrogen vacancy ((NV^−)) population than oxygen-terminated surfaces. (NV^−) population is estimated by the ratio of negative to neutral charged NV zero-phonon lines. Surface chemistry control of (NV^−) density is an important step towards improving the optical and spin properties of NVs for quantum information processing and magnetic sensing.

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