Publication: Near-surface Nitrogen Vacancy Centers in Diamond
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2014-10-21
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Cui, Shanying. 2014. Near-surface Nitrogen Vacancy Centers in Diamond. Doctoral dissertation, Harvard University.
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Abstract
The nitrogen-vacancy (NV) center is a point defect in diamond and has been championed as a promising solid-state "artificial atom." NV center properties such as its bright luminescence, room-temperature optical readout of spin states, and long spin decoherence lifetime make it an excellent system for applications in quantum information processing, high sensitivity magnetometry, and biotagging. In all applications, near-surface NVs are desirable. However, it has been found that the favorable properties of the NV center are significantly diminished as the NV center nears the surface.
This dissertation presents efforts in understanding the effect of the surface on the luminescence of NV centers less than a wavelength of light from the surface. We use plasma assisted etching to, independently, change the surface termination and bring the NV closer to the surface. We find that treating the surface with CF4 plasma results in a deposited polymerous fluorocarbon which helps stabilize nearby NVs. We propose using a downstream etcher to bring NVs closer to the surface, while minimizing damage and maintaining NV luminescence. Finally, we enhance emission of these near-surface NVs by coupling them into a hybrid diamond plasmonic cavity. The fabricated devices result in a measured Q of 170, higher than other previously fabricated diamond plasmonic devices.
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