Publication: Adatom registry on Si(111)-(√3 × √3 )R30°-B
Open/View Files
Date
1990
Published Version
Journal Title
Journal ISSN
Volume Title
Publisher
American Physical Society (APS)
The Harvard community has made this article openly available. Please share how this access benefits you.
Citation
Bedrossian, P., K. Mortensen, D. M. Chen, and J. A. Golovchenko. 1990. Adatom registry on Si(111)-(√3 × √3 )R30°-B. Physical Review B 41, no. 11: 7545–7548. doi:10.1103/physrevb.41.7545.
Research Data
Abstract
We have used tunneling microscopy to determine the binding site of adatoms on Si(111)-(√3 × √3 )R30° stabilized by surface boron doping. The adatoms are found to occupy the T4 binding site, regardless of either the local dopant concentration or the presence or absence of a substitutional boron atom directly underneath individual adatoms.
Description
Other Available Sources
Keywords
Terms of Use
This article is made available under the terms and conditions applicable to Other Posted Material (LAA), as set forth at Terms of Service