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Weak antilocalization and conductance fluctuation in a single crystalline Bi nanowire

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2014

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American Institute of Physics
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Kim, Jeongmin, Seunghyun Lee, Yuri M. Brovman, MinGin Kim, Philip Kim, and Wooyoung Lee. 2014. “Weak Antilocalization and Conductance Fluctuation in a Single Crystalline Bi Nanowire.” In Applied Physics Letters 104, no. 4: 043105. doi:10.1063/1.4863421.

Abstract

We present the low temperature transport properties of an individual single-crystalline Bi nanowire grown by the on-film formation of nanowire method. The temperature dependent resistance and magnetoresistance of Bi nanowires were investigated. The phase coherence length was obtained from the fluctuation pattern of the magnetoresistance below 40 K using universal conductance fluctuation theory. The obtained temperature dependence of phase coherence length and the fluctuation amplitude indicates that the transport of electrons shows 2-dimensional characteristics originating from the surface states. The temperature dependence of the coherence length derived from the weak antilocalization effect using the Hikami–Larkin–Nagaoka model is consistent with that from the universal conductance fluctuations theory.

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