Publication: Theory of Spin Hall Conductivity in n-Doped GaAs
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Date
2005
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American Physical Society (APS)
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Engel, Hans-Andreas, Bertrand I. Halperin, and Emmanuel I. Rashba. 2005. “Theory of Spin Hall Conductivity in n -Doped GaAs.” Physical Review Letters 95 (16) (October 13). doi:10.1103/physrevlett.95.166605.
Abstract
We develop a theory of extrinsic spin currents in semiconductors, resulting from spin-orbit coupling at charged scatterers, which leads to skew-scattering and side-jump contributions to the spin-Hall conductivity. Applying the theory to bulk n-GaAs, without any free parameters, we find spin currents that are in reasonable agreement with experiments by Kato et al.
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