Publication: Spin injection into a ballistic semiconductor microstructure
Open/View Files
Date
2003
Published Version
Journal Title
Journal ISSN
Volume Title
Publisher
American Physical Society (APS)
The Harvard community has made this article openly available. Please share how this access benefits you.
Citation
Kravchenko, Vladimir Ya., and Emmanuel I. Rashba. 2003. “Spin Injection into a Ballistic Semiconductor Microstructure.” Physical Review B 67 (12) (March 31). doi:10.1103/physrevb.67.121310.
Research Data
Abstract
A theory of spin injection across a ballistic ferromagnet-semiconductor-ferromagnet junction is developed for the Boltzmann regime. Spin injection coefficient γ is suppressed by the Sharvin resistance of the semiconductor r∗N=(h/e2)(π2/SN), where SN is the Fermi-surface cross-section. It competes with the diffusion resistances of the ferromagnets rF, and γ∼rF/r∗N≪1 in the absence of contact barriers. Efficient spin injection can be ensured by contact barriers. Explicit formulae for the junction resistance and the spin-valve effect are presented.
Description
Other Available Sources
Keywords
Mesoscale and Nanoscale Physics
Terms of Use
This article is made available under the terms and conditions applicable to Other Posted Material (LAA), as set forth at Terms of Service