Publication: New Reconstructions on Silicon (111) Surfaces
Loading...
Open/View Files
Date
1986
Published Version
Journal Title
Journal ISSN
Volume Title
Publisher
American Physical Society (APS)
The Harvard community has made this article openly available. Please share how this access benefits you.
Citation
Becker, R. S., J. A. Golovchenko, G. S. Higashi, and B. S. Swartzentruber. 1986. New Reconstructions on Silicon (111) Surfaces. Physical Review Letters 57, no. 8: 1020-1027. doi:10.1103/physrevlett.57.1020.
Abstract
We report the first observation of a class of new reconstructions on clean silicon (111) surfaces. The surfaces are prepared by a combination of laser and thermal annealing and the new structures are studied with a tunneling microscope. c−(4×2)and(2×2) regions populate the ordered parts of the surface directly after laser annealing. Subsequent partial thermal anneals result in a surface containing (5×5), (7×7), (9×9), and other intermediate structures. These observations' bearing on the connection between germanium and silicon reconstructions is discussed.
Description
Other Available Sources
Research Data
Keywords
Terms of Use
This article is made available under the terms and conditions applicable to Other Posted Material (LAA), as set forth at Terms of Service