Logarithmic Singularities and Quantum Oscillations in Magnetically Doped Topological Insulators

Abstract

We report magnetotransport measurements on magnetically doped (Bi,Sb)2Te3 films grown by molecular beam epitaxy. In Hall bar devices, we observe logarithmic dependence of transport coefficients in temperature and bias voltage which can be understood to arise from electron-electron interaction corrections to the conductivity and self-heating. Submicron scale devices exhibit intriguing quantum oscillations at high magnetic fields with dependence on bias voltage. The observed quantum oscillations can be attributed to bulk and surface transport.