Publication:
Electric field tuning of band offsets in transition metal dichalcogenides

No Thumbnail Available

Date

2016

Journal Title

Journal ISSN

Volume Title

Publisher

American Physical Society
The Harvard community has made this article openly available. Please share how this access benefits you.

Research Projects

Organizational Units

Journal Issue

Citation

Huang, Dennis, and Efthimios Kaxiras. 2016. “Electric Field Tuning of Band Offsets in Transition Metal Dichalcogenides.” Physical Review B 94 (24). https://doi.org/10.1103/physrevb.94.241303.

Research Data

Abstract

We use first-principles calculations to investigate the band structure evolution of WX2/MoX2 (X = S, Se) heterobilayers under a perpendicular electric field. We characterize the extent to which the type II band alignment in these compounds can be tuned or inverted electrostatically. Our results demonstrate two effects of the stacking configuration. First, different stackings produce different net dipole moments, resulting in band offset variations that are larger than 0.1 eV. Second, based on symmetry constraints that depend on stacking, a perpendicular electric field may hybridizeWX(2) and MoX2 bands that cross at the Brillouin zone corner K. Our results suggest that external electric fields can be used to tune the physics of intralayer and interlayer excitons in heterobilayers of transition metal dichalcogenides.

Description

Other Available Sources

Keywords

Terms of Use

This article is made available under the terms and conditions applicable to Open Access Policy Articles (OAP), as set forth at Terms of Service

Endorsement

Review

Supplemented By

Referenced By

Related Stories