Person:

Barber, Jabulani Randall

This paper applies statistical methods to analyze the large, noisy data sets produced in measurements of tunneling current density (J) through self-assembled monolayers (SAMs) in large-area junctions. It describes and compares the accuracy and precision of procedures for summarizing data for individual SAMs, for comparing two or more SAMs, and for determining the parameters of the Simmons model (β and J0). For data that contain significant numbers of outliers (i.e., most measurements of charge transport), commonly used statistical techniques—e.g., summarizing data with arithmetic mean and standard deviation and fitting data using a linear, least-squares algorithm—are prone to large errors. The paper recommends statistical methods that distinguish between real data and artifacts, subject to the assumption that real data (J) are independent and log-normally distributed. Selecting a precise and accurate (conditional on these assumptions) method yields updated values of β and J0 for charge transport across both odd and even n-alkanethiols (with 99% confidence intervals) and explains that the so-called odd–even effect (for n-alkanethiols on Ag) is largely due to a difference in J0 between odd and even n-alkanethiols. This conclusion is provisional, in that it depends to some extent on the statistical model assumed, and these assumptions must be tested by future experiments.

Tunneling junctions having the structure AgTS–S(CH2)n−1CH3//Ga2O3/EGaIn allow physical–organic studies of charge transport across self-assembled monolayers (SAMs). In ambient conditions, the surface of the liquid metal electrode (EGaIn, 75.5 wt % Ga, 24.5 wt % In, mp 15.7 °C) oxidizes and adsorbs―like other high-energy surfaces―adventitious contaminants. The interface between the EGaIn and the SAM thus includes a film of metal oxide, and probably also organic material adsorbed on this film; this interface will influence the properties and operation of the junctions. A combination of structural, chemical, and electrical characterizations leads to four conclusions about AgTS–S(CH2)n−1CH3//Ga2O3/EGaIn junctions. (i) The oxide is ∼0.7 nm thick on average, is composed mostly of Ga2O3, and appears to be self-limiting in its growth. (ii) The structure and composition (but not necessarily the contact area) of the junctions are conserved from junction to junction. (iii) The transport of charge through the junctions is dominated by the alkanethiolate SAM and not by the oxide or by the contaminants. (iv) The interface between the oxide and the eutectic alloy is rough at the micrometer scale.

This paper compares the J(V) characteristics obtained for self-assembled monolayer (SAM)-based tunneling junctions with top electrodes of the liquid eutectic of gallium and indium (EGaIn) fabricated using two different procedures: (i) stabilizing the EGaIn electrode in PDMS microchannels and (ii) suspending the EGaIn electrode from the tip of a syringe. These two geometries of the EGaIn electrode (with, at least when in contact with air, its solid Ga2O3 surface film) produce indistinguishable data. The junctions incorporated SAMs of SCn–1CH3 (with n = 12, 14, 16, or 18) supported on ultraflat, template-stripped silver electrodes. Both methods generated high yields of junctions (70–85%) that were stable enough to conduct measurements of J(V) with statistically large numbers of data (N = 400–1000). The devices with the top electrode stabilized in microchannels also made it possible to conduct measurements of J(V) as a function of temperature, almost down to liquid nitrogen temperatures (T = 110–293 K). The J(V) characteristics were independent of T, and linear in the low-bias regime (−0.10 to 0.10V); the current density decreased exponentially with increasing thickness of the SAM. These observations indicate that tunneling is the main mechanism of charge transport across these junctions. Both methods gave values of the tunneling decay coefficient, β, of 1.0 nC–1 (0.80 Å–1), and the pre-exponential factor, J0 (which is a constant that includes contact resistance), of 3.0 × 102 A/cm2. Comparison of the electrical characteristics of the junctions generated using EGaIn by both methods against the results of other systems for measuring charge transport indicated that the value of β generated using EGaIn electrodes is compatible with the consensus of values reported in the literature. Although there is no consensus for the value of J0, the value of J0 estimated using the Ga2O3/EGaIn electrode is compatible with other values reported in the literature. The agreement of experimental values of β across a number of experimental platforms provides strong evidence that the structures of the SAMs—including their molecular and supramolecular structure, and their interfaces with the electrodes—dominate charge transport in both types of EGaIn junctions. These results establish that studies of J(V) characteristics of AgTS-SAM//Ga2O3/EGaIn junctions are dominated by the structure of the organic component of the SAM, and not by artifacts due to the electrodes, the resistance of the Ga2O3 surface film, or to the work functions of the metals.

This paper compares charge transport across self-assembled monolayers (SAMs) of n-alkanethiols containing odd and even numbers of methylenes. Ultraflat template-stripped silver (AgTS) surfaces support the SAMs, while top electrodes of eutectic gallium−indium (EGaIn) contact the SAMs to form metal/SAM//oxide/EGaIn junctions. The EGaIn spontaneously reacts with ambient oxygen to form a thin (1 nm) oxide layer. This oxide layer enables EGaIn to maintain a stable, conical shape (convenient for forming microcontacts to SAMs) while retaining the ability to deform and flow upon contacting a hard surface. Conical electrodes of EGaIn conform (at least partially) to SAMs and generate high yields of working junctions. Ga2O3/EGaIn top electrodes enable the collection of statistically significant numbers of data in convenient periods of time. The observed difference in charge transport between n-alkanethiols with odd and even numbers of methylenes — the “odd−even effect” — is statistically discernible using these junctions and demonstrates that this technique is sensitive to small differences in the structure and properties of the SAM. Alkanethiols with an even number of methylenes exhibit the expected exponential decrease in current density, J, with increasing chain length, as do alkanethiols with an odd number of methylenes. This trend disappears, however, when the two data sets are analyzed together: alkanethiols with an even number of methylenes typically show higher J than homologous alkanethiols with an odd number of methylenes. The precision of the present measurements and the statistical power of the present analysis are only sufficient to identify, with statistical confidence, the difference between an odd and even number of methylenes with respect to J, but not with respect to the tunneling decay constant, β, or the pre-exponential factor, J0. This paper includes a discussion of the possible origins of the odd−even effect but does not endorse a single explanation.

This paper describes a method of fabrication that generates small arrays of tunneling junctions based on self-assembled monolayers (SAMs); these junctions have liquid-metal top-electrodes stabilized in microchannels and ultraflat (template-stripped) bottom-electrodes. The yield of junctions generated using this method is high (70−90%). The junctions examined incorporated SAMs of alkanethiolates having ferrocene termini (11-(ferrocenyl)-1-undecanethiol, SC({11})Fc); these junctions rectify currents with large rectification ratios (R), the majority of which fall within the range of 90−180. These values are larger than expected (theory predicts R ≤ 20) and are larger than previous experimental measurements. SAMs of n-alkanethiolates without the Fc groups (SC({n−1})CH(_3), with n = 12, 14, 16, or 18) do not rectify (R ranged from 1.0 to 5.0). These arrays enable the measurement of the electrical characteristics of the junctions as a function of chemical structure, voltage, and temperature over the range of 110−293 K, with statistically large numbers of data (N = 300−800). The mechanism of rectification with Fc-terminated SAMs seems to be charge transport processes that change with the polarity of bias: from tunneling (at one bias) to hopping combined with tunneling (at the opposite bias).