(AIP Publishing, 1998) Evans, P. G.; Dubon, O. D.; Chervinsky, John; Spaepen, F.; Golovchenko, Jene
A monolayer of Pb mediates high-quality homoepitaxialgrowth on Si (111) surfaces at temperatures where growth with other overlayer elements or on bare surfaces leads to amorphous or highly defective crystalline films. Nearly defect-free epitaxy proceeds for film thicknesses up to 1000 Å with no sign that this is an upper limit. The minimum temperature for high-quality epitaxy depends on the substrate miscut. For a 0.2° miscut, the minimum temperature is 340 °C. Filmsgrown on substrates miscut 2.3° towards [112̄] show good crystalline quality down to 310 °C.
High quality homoepitaxialgrowth of Si on Si(111) through an overlayer of Au is shown to occur at 450–500 °C, far below the temperature required for growth of Si of similar quality on bare Si(111). Films of unlimited thickness can be obtained with excellent crystalline quality, as revealed by Rutherford backscattering spectrometry ion channeling measurements (χmin=2.2%). A distinct range of Au coverage (0.4–1.0 monolayer) results in the best quality epitaxy, with no measurable amount of Au trapped at either the interface or within the grownfilms. Cross‐sectional transmission electron microscopy reveals that in filmsgrown with Au coverages below and above the optimum range, the predominant defects are twins on (111) planes and Auinclusions, respectively.
