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Chervinsky, John

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Chervinsky

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Chervinsky, John
Author's Publications: search.filters.isAuthorOfPublication.6e76c6b8-a6eb-42a2-950c-c638c9bf2439

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    Comment on “Low-temperature homoepitaxial growth on high-miscut Si(111) mediated by thin overlayers of Pb” [Appl. Phys. Lett. 75, 2954 (1999)]
    (AIP Publishing, 2000) Evans, P. G.; Dubon, O. D.; Chervinsky, John; Spaepen, Frans; Golovchenko, Jene
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    Absence of discontinuities in ion-channeling parameters for YBa2 Cu3O7−δ thin films
    (American Physical Society (APS), 1997) Hecker, N. E.; Haakenaasen, R.; Golovchenko, Jene; Chervinsky, John; Eom, C. B.
    We have measured the ion-channeling minimum yield (χmin) and angular width (Ψ1/2) for Y, Ba, Cu, and O in 2000 Å (001)-oriented films of YBa2Cu3O7−δ on MgO. The measurements mapped out a 30 K region around the critical temperature (Tc) in 1–2 K steps, and Tc was determinednin situ. A O16(α,α)16O resonance was used to study the O motions. χmin increases and Ψ1/2 decreases with increasing temperature for all elements, as expected for a smooth increase in vibration amplitude. We see no anomalous jumps in either parameter, which differs from previous reports on YBa2Cu3O7−δ bulk single crystals.
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    Low-temperature homoepitaxial growth on Si(111) mediated by thin overlayers of Au
    (AIP Publishing, 1994) Wilk, G. D.; Martinez, R; Chervinsky, John; Spaepen, Frans; Golovchenko, Jene
    High quality homoepitaxialgrowth of Si on Si(111) through an overlayer of Au is shown to occur at 450–500 °C, far below the temperature required for growth of Si of similar quality on bare Si(111). Films of unlimited thickness can be obtained with excellent crystalline quality, as revealed by Rutherford backscattering spectrometry ion channeling measurements (χmin=2.2%). A distinct range of Au coverage (0.4–1.0 monolayer) results in the best quality epitaxy, with no measurable amount of Au trapped at either the interface or within the grownfilms. Cross‐sectional transmission electron microscopy reveals that in filmsgrown with Au coverages below and above the optimum range, the predominant defects are twins on (111) planes and Auinclusions, respectively.
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    Effect of substrate miscut on low-temperature homoepitaxial growth on Si(111) mediated by overlayers of Au: Evidence of step flow
    (AIP Publishing, 1997) Wilk, G. D.; Chervinsky, John; Spaepen, Frans; Golovchenko, Jene
    Observations of homoepitaxialgrowth on low-angle miscut (∼0.1°) Si(111) substrates through an overlayer of Au, together with earlier results on highly miscut Si(111) surfaces, indicate that growth in this system occurs by step flow. The growth temperatures were between 375 and 500 °C. In the optimum range of Au coverage (0.6–1.0 ML), ion channeling measurements yield at best χmin=5.0%, and cross-sectional transmission electron microscopy reveals stacking faults on (111) planes. Films produced under similar conditions on bare Si(111) substrates are much more defective. On the other hand, the defect density in the present films is higher than that in filmsgrown on substrates with a higher miscut angle. The improvement in film quality resulting from the Au overlayers is attributed to an increase in the diffusion length of the Si adatoms, caused by Aupassivation of the Si terraces. It is suggested that Au is more efficient than other overlayers in promoting step flow because Au passivates the Si(111) terraces without passivating the step edges.
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    Low-temperature homoepitaxial growth on Si(111) through a Pb monolayer
    (AIP Publishing, 1998) Evans, P. G.; Dubon, O. D.; Chervinsky, John; Spaepen, F.; Golovchenko, Jene
    A monolayer of Pb mediates high-quality homoepitaxialgrowth on Si (111) surfaces at temperatures where growth with other overlayer elements or on bare surfaces leads to amorphous or highly defective crystalline films. Nearly defect-free epitaxy proceeds for film thicknesses up to 1000 Å with no sign that this is an upper limit. The minimum temperature for high-quality epitaxy depends on the substrate miscut. For a 0.2° miscut, the minimum temperature is 340 °C. Filmsgrown on substrates miscut 2.3° towards [112̄] show good crystalline quality down to 310 °C.
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    An Ice Lithography Instrument
    (American Institute of Physics, 2011) Han, Anpan; Chervinsky, John; Branton, Daniel; Golovchenko, Jene
    We describe the design of an instrument that can fully implement a new nanopatterning method called ice lithography, where ice is used as the resist. Water vapor is introduced into a scanning electron microscope (SEM) vacuum chamber above a sample cooled down to 110 K. The vapor condenses, covering the sample with an amorphous layer of ice. To form a lift-off mask, ice is removed by the SEM electron beam (e-beam) guided by an e-beam lithography system. Without breaking vacuum, the sample with the ice mask is then transferred into a metal deposition chamber where metals are deposited by sputtering. The cold sample is then unloaded from the vacuum system and immersed in isopropanol at room temperature. As the ice melts, metal deposited on the ice disperses while the metals deposited on the sample where the ice had been removed by the e-beam remains. The instrument combines a high beam-current thermal field emission SEM fitted with an e-beam lithography system, cryogenic systems, and a high vacuum metal deposition system in a design that optimizes ice lithography for high throughput nanodevice fabrication. The nanoscale capability of the instrument is demonstrated with the fabrication of nanoscale metal lines.