Publication: Low-temperature homoepitaxial growth on Si(111) through a Pb monolayer
Date
1998
Published Version
Journal Title
Journal ISSN
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Publisher
AIP Publishing
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Citation
Evans, P. G., O. D. Dubon, J. F. Chervinsky, F. Spaepen, and J. A. Golovchenko. 1998. Low-Temperature Homoepitaxial Growth on Si(111) through a Pb Monolayer. Applied Physics Letters 73, no. 21: 3120. doi:10.1063/1.122692.
Research Data
Abstract
A monolayer of Pb mediates high-quality homoepitaxialgrowth on Si (111) surfaces at temperatures where growth with other overlayer elements or on bare surfaces leads to amorphous or highly defective crystalline films. Nearly defect-free epitaxy proceeds for film thicknesses up to 1000 Å with no sign that this is an upper limit. The minimum temperature for high-quality epitaxy depends on the substrate miscut. For a 0.2° miscut, the minimum temperature is 340 °C. Filmsgrown on substrates miscut 2.3° towards [112̄] show good crystalline quality down to 310 °C.
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Keywords
epitaxy, lead, monolayers, thin films, amorphous semiconductors
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