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Narang, Prineha

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Narang

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Prineha

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Narang, Prineha

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2017 - 20204

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Author's Publications: search.filters.isAuthorOfPublication.8bc1356f-1300-4cbf-92d3-e35d2ae44ddd

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    Revealing Multiple Classes of Stable Quantum Emitters in Hexagonal Boron Nitride With Correlated Cathodoluminescence, Photoluminescence and Strain Mapping
    (Nature Publishing Group, 2020-02-24) Hayee, Fariah; Yu, Leo; Zhang, Jingyuan Linda; Ciccarino, Christopher; Nguyen, Minh; Marshall, Ann; Aharonovich, Igor; Vuckovic, Jelena; Narang, Prineha; Heinz, Tony; Dionne, Jennifer; Dionne
    Single photon emitters (SPEs) in solids have emerged as promising candidates for quantum photonic sensing, communications, and computing. Defects in hexagonal boron nitride (hBN) exhibit high-brightness, room-temperature quantum emission, but their large spectral variability and unknown local structure significantly challenge their technological utility. Here, we directly correlate hBN quantum emission with the material's local strain using a combination of photoluminescence (PL), cathodoluminescence (CL) and nano-beam electron diffraction. Across 40 emitters and 15 samples, we observe zero phonon lines(ZPLs) in PL and CL ranging from 540-720 nm. CL mapping reveals that multiple defects and distinct defect species located within an optically-diffraction-limited region can each contribute to the observed PL spectra. Local strain maps indicate that strain is not required to activate the emitters and is not solely responsible for the observed ZPL spectral range. Instead, four distinct defect classes are responsible for the observed emission range. One defect class has ZPLs near 615 nm with predominantly matched CL-PL responses; it is not a strain-tuned version of another defect class with ZPL emission centered at 580 nm. A third defect class at 650 nm has low visible-frequency CL emission; and a fourth defect species centered at 705 nm has a small, ~10 nm shift between its CL and PL peaks. All studied defects are stable upon both electron and optical irradiation. Our results provide an important foundation for atomic-scale optical characterization of color centers, as well as a foundation for engineering defects with precise emission properties.
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    Plasmonic tunnel junctions for single-molecule redox chemistry
    (Nature Publishing Group UK, 2017) de Nijs, Bart; Benz, Felix; Barrow, Steven J.; Sigle, Daniel O.; Chikkaraddy, Rohit; Palma, Aniello; Carnegie, Cloudy; Kamp, Marlous; Sundararaman, Ravishankar; Narang, Prineha; Scherman, Oren A.; Baumberg, Jeremy J.
    Nanoparticles attached just above a flat metallic surface can trap optical fields in the nanoscale gap. This enables local spectroscopy of a few molecules within each coupled plasmonic hotspot, with near thousand-fold enhancement of the incident fields. As a result of non-radiative relaxation pathways, the plasmons in such sub-nanometre cavities generate hot charge carriers, which can catalyse chemical reactions or induce redox processes in molecules located within the plasmonic hotspots. Here, surface-enhanced Raman spectroscopy allows us to track these hot-electron-induced chemical reduction processes in a series of different aromatic molecules. We demonstrate that by increasing the tunnelling barrier height and the dephasing strength, a transition from coherent to hopping electron transport occurs, enabling observation of redox processes in real time at the single-molecule level.
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    Plasmonic hot electron transport drives nano-localized chemistry
    (Nature Publishing Group, 2017) Cortés, Emiliano; Xie, Wei; Cambiasso, Javier; Jermyn, Adam S.; Sundararaman, Ravishankar; Narang, Prineha; Schlücker, Sebastian; Maier, Stefan A.
    Nanoscale localization of electromagnetic fields near metallic nanostructures underpins the fundamentals and applications of plasmonics. The unavoidable energy loss from plasmon decay, initially seen as a detriment, has now expanded the scope of plasmonic applications to exploit the generated hot carriers. However, quantitative understanding of the spatial localization of these hot carriers, akin to electromagnetic near-field maps, has been elusive. Here we spatially map hot-electron-driven reduction chemistry with 15 nm resolution as a function of time and electromagnetic field polarization for different plasmonic nanostructures. We combine experiments employing a six-electron photo-recycling process that modify the terminal group of a self-assembled monolayer on plasmonic silver nanoantennas, with theoretical predictions from first-principles calculations of non-equilibrium hot-carrier transport in these systems. The resulting localization of reactive regions, determined by hot-carrier transport from high-field regions, paves the way for improving efficiency in hot-carrier extraction science and nanoscale regio-selective surface chemistry.
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    Increased rise time of electron temperature during adiabatic plasmon focusing
    (Nature Publishing Group UK, 2017) Lozan, Olga; Sundararaman, Ravishankar; Ea-Kim, Buntha; Rampnoux, Jean-Michel; Narang, Prineha; Dilhaire, Stefan; Lalanne, Philippe
    Decay of plasmons to hot carriers has recently attracted considerable interest for fundamental studies and applications in quantum plasmonics. Although plasmon-assisted hot carriers in metals have already enabled remarkable physical and chemical phenomena, much remains to be understood to engineer devices. Here, we present an analysis of the spatio-temporal dynamics of hot electrons in an emblematic plasmonic device, the adiabatic nanofocusing surface-plasmon taper. With femtosecond-resolution measurements, we confirm the extraordinary capability of plasmonic tapers to generate hot carriers by slowing down plasmons at the taper apex. The measurements also evidence a substantial increase of the “lifetime” of the electron gas temperature at the apex. This interesting effect is interpreted as resulting from an intricate heat flow at the apex. The ability to harness the “lifetime” of hot-carrier gases with nanoscale circuits may provide a multitude of applications, such as hot-spot management, nonequilibrium hot-carrier generation, sensing, and photovoltaics.