Person:

Ramanathan, Shriram

We present an investigation of optically active near-surface defects in sputtered Al-doped ZnO films using scanning tunneling microscope cathodoluminescence (STM-CL). STM-CL maps suggest that the optically active sites are distributed randomly across the surface and do not correlate with the granular topography. In stark contrast to photoluminescence results, STM-CL spectra show a series of sharp, discrete emissions that characterize the dominant optically active defect, which we propose is an oxygen vacancy. Our results highlight the ability of STM-CL to spectrally fingerprint individual defects and contribute to understanding the optical properties of near-surface defects in an important transparent conductor.

For most metals, increasing temperature (T) or disorder hastens electron scattering. The electronic conductivity (σ) decreases as T rises because electrons are more rapidly scattered by lattice vibrations. The value of σ decreases as disorder increases because electrons are more rapidly scattered by imperfections in the material. This is the scattering rate hypothesis, which has guided our understanding of metal conductivity for over a century. However, for so-called bad metals with very low σ this hypothesis predicts scattering rates so high as to conflict with Heisenberg’s uncertainty principle1, 2. Bad-metal conductivity has remained a puzzle since its initial discovery in the 1980s in high-temperature superconductors. Here we introduce the rare-earth nickelates (RNiO3, R = rare-earth) as a class of bad metals. We study SmNiO3 thin films using infrared spectroscopy while varying T and disorder. We show that the interaction between lattice distortions and Ni–O covalence explains bad-metal conductivity and the insulator–metal transition. This interaction shifts spectral weight over the large energy scale established by the Ni–O orbital interaction, thus enabling very low σ without violating the uncertainty principle.