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Bandgap and Band Offsets Determination of Semiconductor Heterostructures Using Three-Terminal Ballistic Carrier Spectroscopy

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0904.2364.pdf (217.75 KB)

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2009-09-14

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10.1063/1.3224914

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AIP Publishing
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Yi, Wei, Venkatesh Narayanamurti, Hong Lu, Michael A. Scarpulla, Arthur C. Gossard, Yong Huang, Jae-Hyun Ryou, and Russell D. Dupuis. 2009. “Bandgap and Band Offsets Determination of Semiconductor Heterostructures Using Three-Terminal Ballistic Carrier Spectroscopy.” Applied Physics Letters 95 (11): 112102. https://doi.org/10.1063/1.3224914.

Abstract

Utilizing ambipolar tunnel emission of ballistic electrons and holes, we have developed a model-independent method to self-consistently measure bandgaps of semiconductors and band offsets at semiconductor heterojunctions. Lattice-matched GaAs/AlxGa1-xAs and GaAs/(AlxGa1-x)(0.51)In0.49P(100) single-barrier heterostructures are studied at 4.2 K. For the GaAs/AlGaAs interface, the measured Gamma band offset ratio is 60.4:39.6 (+/- 2%). For the heteroanion GaAs/AlGaInP (100) interface, this ratio varies with the Al composition and is distributed more in the valence band. The indirect-gap X band offsets observed at the GaAs/AlGaInP interface deviates from predictions by the transitivity rule.

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http://arxiv.org/pdf/0904.2364.pdf

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http://nrs.harvard.edu/urn-3:HUL.InstRepos:37942011

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