Atomic Layer Deposition of Ruthenium Thin Films From an Amidinate Precursor

Abstract

Ruthenium thin films were deposited by atomic layer deposition from bis(N,N’-di-tert-butylacetamidinato)ruthenium(II) dicarbonyl and O2. Highly conductive, dense and pure thin films can be deposited when oxygen exposure EO approaches a certain threshold ( Emax ). When EO > Emax, the film peels off due to the recombinative desorption of O2 at the film/substrate interface. Analysis by an atomic probe microscope shows that the crystallites are nearly free of carbon impurity (<0.1 at.%), while a low level of carbon (<0.5 at.%) is segregated near the grain boundaries. The atom probe microscope also shows that a small amount of O impurity (0.3 at.%) is distributed uniformly between the crystallites and the grain boundaries.