Publication: Atomic layer deposition of Zn(O,S) thin films with tunable electrical properties by oxygen annealing
Date
2013
Published Version
Journal Title
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Publisher
American Institute of Physics
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Citation
Hejin Park, Helen, Rachel Heasley, and Roy G. Gordon. 2013. “Atomic layer deposition of Zn(O,S) thin films with tunable electrical properties by oxygen annealing.” Applied Physics Letters 102 (13): 132110.
Research Data
Abstract
Zinc oxysulfide, Zn(O,S), films grown by atomic layer deposition were annealed in oxygen to adjust the carrier concentration. The electron carrier concentration of Zn(O,S) can be reduced by several orders of magnitude from \(10^{19}\) to \(10^{15} cm^{−3}\) by post-deposition annealing in oxygen at temperatures from 200 °C to 290 °C. In the case of Zn(O,S) with S/Zn = 0.37, despite the considerable change in the electron carrier concentration, the bandgap energy decreased by only ∼0.1 eV, and the crystallinity did not change much after annealing. The oxygen/zinc ratio increased by 0.05 after annealing, but the stoichiometry remained uniform throughout the film.
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Keywords
annealing, atomic layer deposition, carrier density, energy gap, II-VI semiconductors, semiconductor growth, semi conductor thin films, stoichiometry, wide band gap semiconductors, zinc compounds
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