Publication:

Atomic Layer Deposition of Lanthanum-Based Ternary Oxides

Thumbnail Image

Open/View Files

atomic_layer_deposition.pdf (191.22 KB)

Date

2009

Authors

Published Version

10.1149/1.3074314

Journal Title

Journal ISSN

Volume Title

Publisher

Electrochemical Society
The Harvard community has made this article openly available. Please share how this access benefits you.

Research Projects

Organizational Units

Journal Issue

Citation

Wang, Hongtao, Jun-Jieh Wang, Roy Gerald Gordon, Jean-Sébastien M. Lehn, Huazhi Li, Daewon Hong, and Deo V. Shenai. 2009. Atomic layer deposition of lanthanum-based ternary oxides. Electrochemical and Solid-State Letters 12(4): G13-G15.

Abstract

Lanthanum-based ternary oxide (La_xM_{2−x}O_3) (M = Sc, Lu, or Y) films were deposited on HF-last Si substrates by atomic layer deposition. Both (LaScO_3) and (LaLuO_3) films are amorphous while the as-deposited (La_xY_{2−x}O_3) films form a polycrystalline layer/amorphous layer structure on Si. Transmission electron microscopy and electrical analysis show the absence of interfacial layers. The dielectric constants for (LaScO_3), (LaLuO_3), and (La_{1.23}Y_{0.77}O_3) films are (\sim 23), (28 \pm 1), and (17 \pm 1.3), respectively, with leakage current density up to 6 orders of magnitude lower than that of thermal (SiO_2) with the same effective oxide thickness. Conformal coating thickness is demonstrated on holes with aspect ratio (\sim 80:1).

Description

Other Available Sources

Research Data

Keywords

amorphous state, atomic layer deposition, dielectric thin films, lanthanum compounds, leakage currents, permittivity, Poole-Frenkel effect, transmission electron microscopy

Terms of Use

This article is made available under the terms and conditions applicable to Other Posted Material (LAA), as set forth at Terms of Service

URI

http://nrs.harvard.edu/urn-3:HUL.InstRepos:9310888

Collections

FAS Scholarly Articles

Endorsement

Review

Supplemented By

Related Stories