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Smooth, Low-Resistance, Pinhole-free, Conformal Ruthenium Films by Pulsed Chemical Vapor Deposition

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Ruthenium-ECS-12-20-2012-DASH.pdf (795.92 KB)

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2013

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10.1149/2.003303jss

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Electrochemical Society
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Wang, Xinwei, and Roy G. Gordon. 2013. Smooth, low-resistance, pinhole-free, conformal ruthenium films by pulsed chemical vapor deposition. ECS Journal of Solid State Science and Technology 2(3): N41–N44.

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Abstract

Ruthenium (Ru) thin films were deposited by pulsed chemical vapor deposition with precursors bis(N,N′-di-tert-butylacetamidinato)ruthenium(II)dicarbonyl, ammonia and hydrogen. Low-resistance polycrystalline Ru films with bulk density were obtained. Good adhesion to (SiO_2) substrates was achieved by introducing a thin layer of WN in between the Ru and the (SiO_2). Ru films only (\sim 2) nm thick fully covered the WN layer without any pinholes. Deposition of Ru inside narrow holes showed that good conformality was obtained by lowering the deposition temperature. The film surface was smooth, and the rms roughness value did not increase too much after rapid thermal annealing at 700°C.

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dielectric science and materials

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http://nrs.harvard.edu/urn-3:HUL.InstRepos:10121957

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