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GaAs Enhancement-Mode NMOSFETs Enabled by Atomic Layer Epitaxial (La_{1.8}Y_{0.2}O_3) as Dielectric

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2013-02-04

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Institute of Electrical and Electronics Engineers
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Dong, L., X. W. Wang, J. Y. Zhang, X. F. Li, Roy Gerald Gordon, and P. D. Ye. Forthcoming. GaAs enhancement-mode NMOSFETs enabled by atomic layer epitaxial \(La_{1.8}Y_{0.2}O_3\) as dielectric. IEEE Electron Device Letters.

Abstract

We demonstrate high performance enhancement-mode (E-mode) GaAs NMOSFETs with an epitaxial gate dielectric layer of (La_{1.8}Y_{0.2}O_3) grown by atomic layer epitaxy (ALE) on GaAs(111)A substrates. A (0.5-\mu m)-gate-length device has a record-high maximum drain current of 336 mA/mm for surface-channel E-mode GaAs NMOSFETs, a peak intrinsic transconductance of 210 mS/mm, a subthreshold swing of 97 mV/dec and an (I_{ON}/I_{OFF}) ratio larger than (10^7). Thermal stability of the single crystalline (La_{1.8}Y_{0.2}O_3)-single crystalline GaAs interface is investigated by capacitance-voltage (C-V) and conductance-voltage (G-V) analysis. High temperature annealing is found to be effective to reduce the (D_{it}).

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enhancement mode, GaAs MOSFET, atomic layer epitaxy

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http://nrs.harvard.edu/urn-3:HUL.InstRepos:10265396

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