Publication: Low Temperature Epitaxial Growth of High Permittivity Rutile (TiO_2) on (SnO_2)
Loading...
Open/View Files
Date
2010
Authors
Published Version
Journal Title
Journal ISSN
Volume Title
Publisher
Electrochemical Society
The Harvard community has made this article openly available. Please share how this access benefits you.
Citation
Wang, Hongtao, Sheng Xu, and Roy G. Gordon. 2010. Low temperature epitaxial growth of high permittivity rutile \(TiO_2\) on \(SnO_2\). Electrochemical and Solid-State Letters 13(9): G75-G78.
Abstract
Thin films of high dielectric constant (\kappa \sim 68) rutile phase titanium dioxide (TiO_2) were grown epitaxially on tin dioxide (SnO_2) substrates, which are a low cost, more abundant alternative to ruthenium electrodes used previously. Atomic layer deposition at low temperature ({250^\circ C}) was used with titanium(IV) tetrakis(isopropoxide) and hydrogen peroxide (H_2O_2) as precursors. The rutile (TiO_2) thin films have crystalline grains that match the structure and orientation of the grains in the polycrystalline rutile phase (SnO_2) substrates. The epitaxial relations can be clearly identified from the continuous lattice fringes across the interfaces.
Description
Other Available Sources
Research Data
Keywords
atomic layer epitaxial growth, crystal microstructure, epitaxial layers, high-k dielectric thin films, permittivity, titanium compounds
Terms of Use
This article is made available under the terms and conditions applicable to Other Posted Material (LAA), as set forth at Terms of Service