Publication: Atomic Layer Deposited Zinc Tin Oxide Channel for Amorphous Oxide Thin Film Transistors
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Date
2012
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American Institute of Physics
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Heo, Jaeyeong, Sang Bok Kim, and Roy G. Gordon. 2012. Atomic layer deposited zinc tin oxide channel for amorphous oxide thin film transistors. Applied Physics Letters 101(11): 113507.
Abstract
Bottom-gate thin film transistors with amorphous zinc tin oxide channels were grown by atomic layer deposition (ALD). The films maintained their amorphous character up to temperatures over 500 (^{\circ})C. The highest field effect mobility was ~13 (cm^2/V^.s) with on-to-off ratios of drain current ~10(^9)-10(^{10}). The lowest subthreshold swing of 0.27 V/decade was observed with thermal oxide as a gate insulator. The channel layers grown at 170 (^{\circ})C showed better transistor properties than those grown at 120 (^{\circ})C. Channels with higher zinc to tin ratio (~3-4) also performed better than ones with lower ratios (~1-3).
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