Publication: Atomic Layer Deposition of Tin Oxide with Nitric Oxide as an Oxidant Gas
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Date
2012
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Royal Society of Chemistry
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Heo, Jaeyeong, Sang Bok Kim, and Roy Gerald Gordon. 2012. Atomic layer deposition of tin oxide with nitric oxide as an oxidant gas. Journal of Materials Chemistry 22(11): 4599-4602.
Abstract
Atomic layer deposition (ALD) of tin oxide ((SnO_2)) thin films was achieved using a cyclic amide of Sn(II) (1,3-bis(1,1-dimethylethyl)-4,5-dimethyl-(4R,5R)-1,3,2-diazastannolidin-2-ylidene) as a tin precursor and nitric oxide (NO) as an oxidant gas. Film properties as a function of growth temperature from (130-250^{\circ}C) were studied. Highly conducting (SnO_2) films were obtained at (200-250^{\circ}C) with the growth per cycle of (~1.4 \mathring{A})/cycle, while insulating films were grown at temperatures lower than (200^{\circ}C). Conformal growth of (SnO_2) in holes of aspect-ratios up to ~50 : 1 was successfully demonstrated.
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